Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

Providing high resolution in high-volume manufacturing, ASML’s extreme ultraviolet (EUV) lithography systems are pushing Moore’s Law forward. Discover our NXE systems that use EUV light to deliver high-resolution lithography and make mass production of the world’s most advanced microchips possible.

The TWINSCAN EXE:5000 is the first 0.55 NA, or ‘High NA’, EUV lithography system. Its 8 nm resolution will enable chipmakers to print with a single exposure features 1.7 times smaller – and therefore achieve transistor densities 2.9 times higher …

Using proprietary techniques, the EUV N&K and Phase Measurement Tool allows phase and as-deposited film parameters to be extracted for an EUV multilayer and absorber stack. With the ability to support standard mask formats and full automation, the tool enables parameter and phase mapping over the full area of the mask; thus, enabling the next ...

we’ve been building our EUV expertise and capacity over the last year. Working closely with ASML, we will harness High-NA EUV’s high-resolution patterning as one of the ways we continue Moore’s Law and maintain our strong history of progression down to the smallest of geometries,” said Dr. Ann Kelleher, executive vice president and

The MET is a 0.3-NA extreme ultraviolet (EUV) microlithography tool situated on undulator beamline 12.0.1.3 of the Advanced Light Source at Lawrence Berkeley National Laboratory. The MET has a unique programmable coherence illuminator that allows it to achieve world-leading 12-nm imaging resolution.

ZYGO corporation got contracted to build several EUV-L Micro-Field Exposure Tools with 0.5NA, known as MET5. Those tools are used for infrastructure development required for the EUV lithography industry to support printing at the ~12nm node …

tools: • EUV Reflectometer o Measures the reflectivity and uniformity of multilayer coatings for EUV lithography mask blanks and absorbers • EUV Resist Outgassing Tool o Measures the contamination of optics from resist outgassing by using EUV (Extreme Ultraviolet) photon exposure, or alternatively by using electron beam (e-gun) exposure

3 天之前 · The images of the lines were printed after the tool’s optics, sensors and stages completed coarse calibration. The company said the ability to print 10 nm dense lines with a full field optical lithography system is a key step toward …

Over the years, the resolution of these tools has improved from several micrometers in the early 1970s to 13 nm in state-of-the-art extreme ultraviolet (EUV) tools [λ = 13.5 nm, numerical aperture (NA) = 0.33] and will improve even further down to 8 nm in what are called high-NA EUV exposure tools (NA = 0.55). There is an outlook toward ...