他们的Clean Track Lithius Pro Z 与每台 ASML EUV 机器一起使用。 事实证明，它对于最初的 EUV 节点是可靠且高效的，但随着行业超越单一图案化 EUV，化学放大抗蚀剂 (CAR) 显然已 …

EUV (extreme ultra-violet) lithography and dry etch technology to provide solutions for complex patterns with low defectivity, cross wafer uniformity and lower process variability. In this paper, …

CLEAN TRACK™ LITHIUS Pro™ Z is TEL's most advanced 300mm coater/developer for the 10nm technology node and beyond. It incorporates user-friendly operation, flexible …

Baseline for EUV Track Process Coating uniformity and defectivity for Ultra-thin Under Layer. CD uniformity for L/S and C/H. Defect review with full field exposure. LWR improvement.

半导体光刻胶根据曝光光源波长不同来分类，分别是 紫外全谱 (300～450nm)、 G 线 (436nm)、 I 线 (365nm）、 深紫外 (DUV，包括248nm和193nm)和 极紫外 (EUV)，相对应于各曝光波长 …

MaskTrack Pro is designed to balance the most stringent conditions of 193i 1x nm half-pitch (hp) DPT, extreme-ultraviolet lithography (EUVL) and nanomprint lithography (NIL) processing with …

There are several different material approaches for EUV lithography such as chemically amplified positive tone resist (CAR), negative tone resist, and non-CAR resist. Fundamental studies and …

2015年3月19日 · Line width roughness (LWR) and defect control are demonstrated utilizing the SOKUDO DUO coat-develop track system with an ASML NXE:3100 in the IMEC (Leuven, …

2020年12月4日 · EUV，全名為Extreme Ultraviolet，中文叫做「極紫外光」，是一種波長極短的紫外光，一般生活中要塗乳液防曬的紫外線波長約在100~400奈米，而極紫外光才13.5 奈米而 …

Materials and Exposure tool were big improvement. Also better LWR was obtained by EUV Track process. 50% improvement (5.7nm 2.8nm) compared with 2012. LWR was improved about …