Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

2024年11月28日 · Extreme ultraviolet lithography (EUVL) was recently adopted by the semiconductor industry as the leading-edge lithography technique for continued miniaturization of...

目前,EUV光源主要通过5种技术方案可以获得,分别是:同步辐射源、自由电子激光器、激光等离子体 (Laser Produced Plasma,LPP)、放电等离子体 (Discharged Produced Plasma,DPP)和激光辅助放电等离予体 (Laser-assisted Discharge Plasnla,LDP)。 选取哪一种方案,并如何运用该方案以大幅提高EUVL光刻机光源的功率来满足大规模工业生产 (High Volume Manufacturing,HVM)的需求成为业界所必须攻克的主要难题之一。 同步辐射源的优点是可以产生高功率的EUV光,而且它对光 …

2014年1月31日 · Extreme ultravioletlithography (EUVL) and three dimensional integrated circuit (3D IC) were thoroughly reviewed. Since proposed in 1988, EUVL obtained intensive studies globally and, after 2000, became the most promising next generation lithography method even though challenges were present in almost all aspects of EUVL technology.

2019年6月1日 · In this review, working principles, module structures and technical challenges have been briefly discussed regarding each EUV subsystem, including light source, reflection mirrors and system,...

Five technical EUV Lithography (EUVL) topics were covered. Understanding the complexity of each topic and how they support each other is vital to grasping the EUVL ecosystem, thus, they are briefly outlined below. Industry recommendations from these five topics are included. In all five

Inverse Compton Source for Extreme Ultraviolet Lithography (new proposals) Synchrotron light sources are very successful and attract users with the background in research, industry, medicine and defense. ICS carries a potential of bringing light source quality X-rays to the users. ! ICS path to the market has many challenges.

RadiaBeam Technologies has been actively involved in the development of high repetition rate Inverse Compton Scattering (ICS) X-ray sources since 2008, and is currently conducting a pilot experiment on an ICS system scalable to Extreme Ultraviolet Lithography (EUVL) wavelength range, in collaboration with the Accelerator Test Facility at

2023年9月9日 · 极紫外光刻（EUVL）技术是半导体制造的核心技术之一，能够实现更小的特征尺寸，从而实现器件的小型化。 全球的研究人员和公司正在专注于开发新型极紫外（EUV）光刻胶材料，以支持纳米级分辨率的EUVL图案化并提高半导体器件的性能。 光刻是半导体制造中的关键步骤，传统光刻使用深紫外光，但随着器件尺寸的减小，EUV光刻变得必不可少。 EUV光的工作波长较短，能够以高精度打印更小的特征，因此EUV光刻胶材料至关重要。 这些创新材料通常分 …

• We anticipate that CSM/ICS will help to evaluate and measure performance of EUV mask