Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

2024年11月28日 · EUVL has emerged as a critical technique, taking advantage of shorter wavelengths to achieve nanoscale feature sizes with higher precision and lower defect rates than previous lithography methods.

2019年6月19日 · In this paper, we had a broad but not specialized overview of extreme ultraviolet lithography technology and its application in mainstream semiconductor wafer manufacturing. Major EUVL modules include light source and vessel, reflection mirror system under vacuum, reflective reticle and aerial inspection system.

Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance because LER does not scale along with feature ...

2019年6月1日 · Although several years delayed than its initial plan, extreme UV lithography (EUVL) with 13.5nm wavelength has been finally implemented into high volume manufacture (HVM) of mainstream...

Extreme ultraviolet lithography (EUVL) was recently adopted by the semiconductor industry as the leading-edge lithography technique for continued miniaturization of semiconductor devices in line with Moore’s law. EUVL has emerged as a critical technique, taking advantage of shorter wavelengths to achieve nanoscale feature sizes with higher ...

2020年12月6日 · 极紫外光刻(EUVL)是以波长为11～14nm的EUV射线为曝光光源的微电子光刻技术，适用于特征尺寸为32nm及更细线宽的集成电路的大批量生产。EUV光源的特点决定了EUVL必须采用镀有多层膜的反射光学元件。为满足光刻成像的质量要求，EUVL光学系统像差要控制 …

Five technical EUV Lithography (EUVL) topics were covered. Understanding the complexity of each topic and how they support each other is vital to grasping the EUVL ecosystem, thus, they are briefly outlined below. Industry recommendations from these five topics are included. In all five

AGC has provided 1st generation EUVL blanks which are widely used to fabricate the reticles with PPT exposure tools for EUVL pilot lines. The only technical issue is the ML blank defect and its inspection toward the EUVL HVM. AGC has continuously reduced the defect by optimizing the blank fabrication processes. The current best defect is 0.20/cm2

2023年9月9日 · 极紫外光刻（EUVL）技术是半导体制造的核心技术之一，能够实现更小的特征尺寸，从而实现器件的小型化。 全球的研究人员和公司正在专注于开发新型极紫外（EUV）光刻胶材料，以支持纳米级分辨率的EUVL图案化并提高半导体器件的性能。 光刻是半导体制造中的关键步骤，传统光刻使用深紫外光，但随着器件尺寸的减小，EUV光刻变得必不可少。 EUV光的工作波长较短，能够以高精度打印更小的特征，因此EUV光刻胶材料至关重要。 这些创新材料通常分 …