2024年11月28日 · EUVL requires a vacuum, reflective optics and reflective reticle — referred to as a photomask — owing to the strong absorbance of all materials at EUV wavelengths. Owing to multilayer coatings,...

2021年2月23日 · Mask specific challenges involve mask deficiency induced stochastic failures, the anamorphicity of high-NA EUVL and mask 3D effects. Pellicle development and mask lifetime understanding are well progressing to control mask deficiency impact on wafer, and mask data prep software is being made aware to handle different mask reduction factors.

1998年12月1日 · In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the...

2001年11月1日 · Extreme ultraviolet lithography (EUVL) is a leading next generation lithography technology. Significant progress has been made in developing mask fabrication processes for EUVL. The mask blank for EUVL consists of a low thermal expansion material substrate having a square photomask form factor that is coated with Mo/Si multilayers.

2018年3月21日 · This paper discusses the principal theory on the EUV mask design and its component materials including ML reflector and EUV absorber. Mask shadowing effect (or mask 3D effect) is explained and its technical solutions like phase shift mask is reviewed.

Significant progress has been made in developing mask fabrication processes for extreme ultraviolet lithography (EUVL). The mask blank for EUVL consists of a low thermal expansion material substrate having a square photomask form factor that is coated with Mo/Si multilayers. A SEMI standard is now available for mask substrates.

Improved mask stage tilt control: Optimized mask tilt stage control to improve inspection sensitivity uniformity. Installed Purge system to reduce/ minimize optics contamination from environment. Installed new capability to allow FSE to adjust …

Target throughput – 2 to 5 hour inspection per mask All defect types capture including Phase defects, ML Blank defects, Contamination defects which impact wafer patterning

•Approximately 20%-25% of total mask blank defects are deposition related •Mask blank defectivity requirements have not yet been demonstrated –Large “killer” defects are a significant problem •Prohibits implementation of defect mitigation schemes •Comes …

In this paper we will explore why we refer to EUVL as optical and what aspects are unique. We will explore why 13.5nm is the right wavelength, EUV refraction/reflection, angular limits, scattering, mask plane and 3D effects, pupil obscuration and apodization, multilayer and thin film influences, origins of aberration, impacts of polarization ...