2011年2月28日 · An A1 2 O 3 etch mechanism for fluorine based plasmas is proposed, comprising of the formation of AlF x and its subsequent removal under influence of high energy ion bombardment.The latter appears to be the rate limiting step.

2022年4月1日 · In this work, we employ a combination of Scanning Electron Microscopy (SEM), Spectroscopic Ellipsometry (SE) and X-Ray Photoelectron Spectroscopy (XPS) depth profiling to scrutinize the Al2 O 3 mask etching mechanism and therefore the origin of …

2017年10月22日 · The best method to etch alumina (Al2O3) is by a standard procedure of electrochemical etching in order to reveal the microstructure characterization of the sample.

2022年7月11日 · The atomic layer etching (ALE) of Al2O3 was demonstrated using sequential HF and BCl3 exposures. BCl3 is a new precursor for thermal Al2O3 ALE that can provide pathways for both ligand-exchange and...

Precise technique can remove Al2O3 film slowly and evenly by adjusting the gas ratio, pressure, power, temperature and other parameters in ICP plasma. The volatile will release occurs during a physical bombard between a gaseous reactant and the surface modified layer.

2013年10月1日 · The monolayer etching of Al 2 O 3 for ALET is investigated. By using the optimized ALET condition, the etch depth of a very thin Al 2 O 3 can precisely be controlled with minimal surface roughness and without stoichiometric change during the ALET of Al 2 O 3.

2024年11月22日 · The ALE process enables accurate control of Al 2 O 3 film thickness with an etch rate of 0.16 ± 0.02 nm per cycle, and an ALE synergy of 98%. The ALE mechanism is investigated using Fourier transform infrared spectroscopy (FTIR) and density functional theory (DFT) simulations.

2022年12月30日 · In this study, the CF 4 plasma source commonly used for dry etching is combined with a self-developed low-ion-bombardment remote Al 2 O 3 plasma-based ALE system to obtain Al 2 O 3 plasma fluorination conditions, and then the AlCl (CH 3) 2 (dimethylaluminum chloride) precursor is used to develop the pALE Al 2 O 3 process.

The TMA removal step is essentially a thermal etching process of AlF3. To what degree TMA etches incompletely fluorinated aluminum AlOxFy is not known. In this paper, we explore the relationship of thermal etching of fully fluorinated AlF3 with DMAC as well as thermal ALE of Al2O3 with NF3/DMAC or HF/DMAC.

2022年4月22日 · In this study, a cyclic isotropic plasma atomic layer etching (ALE) process was developed for aluminum oxide that involves fluorination with NF 3 plasma and ligand exchange with trimethylaluminum (TMA).