Study of SiO2 Etching Processing with CH4/SF6 Plasmas
2020年5月17日 · Silicon dioxide (SiO2) layers using photoresist (PR) masks are etched by inductively coupled plasma in CH4/SF6 under various etching conditions. A thin CHxFy polymer layer which exists on the surfa...
二氧化硅（sio2）反应离子刻蚀原理-plasma etching
2024年11月6日 · 二氧化硅(SiO2)具有硬度高、耐磨性好、绝热性好、光透过率高、抗侵蚀能力强等优点以及良好的介电性质,在电子器件和集成器件、光学薄膜器件、传感器等相关器件中得到广泛应用。
The basic etching mechanism in the isotropic etching of Si is divided into the oxidation of silicon using nitric acid and the etching of the oxide constantly formed on the surface from this with hydrofl uoric acid: (1) Formation of NO 2 from nitric acid: 4 HNO 3 → 4 NO 2 + 2 H 2 O + O 2 (2) Oxidation of silicon by NO 2: 2 NO 2 + Si → SiO 2 ...
In this study, an isotropic etching process of SiO2 selective to Si3N4 using NF3/H2/methanol chemistry was investigated. HF was formed using a NF3/H2 remote plasma, and in order to remove the F...
Selective isotropic etching of SiO2 over Si3N4 using NF3/H2 …
2023年7月18日 · In this study, an isotropic etching process of SiO 2 selective to Si 3 N 4 using NF 3 /H 2 /methanol chemistry was investigated. HF was formed using a NF 3 /H 2 remote plasma, and in order to...
SILICON DIOXIDE PLASMA ETCH GUIDE Author: Michael Martin Version: 1.0 February 12, 2020 Purpose: Plasma etch rates of SiO2 and photoresist (PR) Shipley 1827 for several recipes and 2 tools Processes: Trion and March plasma etching of thermal SiO 2 (silicon dioxide)
Highly selective and vertical etch of silicon dioxide using …
2021年5月27日 · Highly selective and vertical profile etching of thermally grown SiO 2 films using thin metallic Ru mask films was investigated in a commercial inductively coupled plasma etcher. The effects of varying chamber pressure, substrate bias, and gas composition on etch performance were all investigated.
SiO2 etching profile, etch rate, and selectivity of SiO2/Si at ...
The etch profiles of the SiO2 contact holes in HFE-347mcc3/O2/Ar plasmas showed more bowing at lower flow rate ratios of HFE-347mcc3 to Ar, whereas more narrowing occurred at higher ratios.
In this study, we develop a novel method for high-temperature atmospheric HF gas-phase deep etching of SiO2 using a novolac-type photoresist as a catalyst. The acceleration of the etching reaction of H2O molecules was prevented by employing processing temperatures of >100 °C.
WET ETCHING OF SILICON DIOXIDE - microtechweb.com
WET ETCHING OF SILICON DIOXIDE. SiO2 films have two main roles in microtechnologies: as a dielectric layer or as a doping/etching mask. In both cases, patterning is usually necessary. SiO2 is named "thermal" when obtained in a high temperature oven …