2021年3月15日 · We performed systematic studies of the effect of sputter etching with Ar + ions prior to XPS analyses, on the appearance of core level spectra recorded from polycrystalline Group IVB transition metal boride, carbide, nitride, and oxide thin film specimens. The aim is to enhance the reliability of XPS spectra interpretation by (i) illustrating ...

2023年11月17日 · XPS depth profiling combined with ion beam etching methods is a primary tool to study the chemical composition of functional materials at different scales from the surface to the bulk. This review aims to bring a landscape of typical applications of ion etching techniques in XPS depth profiling to the audience of general materials.

XPS depth profile analysis combines X-ray photoelectron spectroscopy with ion beam etching to reveal subsurface information for a range of materials.

2020年10月30日 · The surface chemistry of ZnSe was studied by XPS as a function of different surface treatment, including chemical etching in solutions of HCl, KMnO 4:H 2 SO 4, and NH 4 OH:C 2 H 6 O, as well as UV-O 3 treatment. The results give new insights into how to interpret XPS spectra of ZnSe as well as how the different surface treatments affect the ...

2023年5月25日 · X-ray photoelectron spectroscopy (XPS) is a popular analytical technique in materials science as it can assess the surface chemistry of a broad range...

2018年4月1日 · Si/Nb/Si trilayers with 9.5 and 1.3 nm thick niobium layer prepared by magnetron sputtering were studied using XPS depth-profiling technique. Analysis of the Nb 3 d, Si 2 p HR XPS along with VB spectra show a strong modification of electronic structure during argon sputtering procedure.

While XPS is a surface sensitive technique, a depth profile of the sample in terms of XPS quantities can be obtained by combining a sequence of ion gun etch cycles interleaved with XPS measurements from the current surface. An ion gun is used to etch the material for a period of time before being turned off whilst XPS spectra are acquired.

2025年3月17日 · The etching time was set to 60 s, which was sufficient to eliminate any native silicon oxide layers (SiOx) and surface impurities, while maintaining the integrity of the patterned features. Immediately after the etching process, the samples were transferred to the XPS system to avoid recontamination from ambient exposure.

XPS depth profiling. Experimental arrangement for a depth-profile experiment. Monatomic depth profiling uses an ion beam to etch layers of the surface or surface contamination, revealing subsurface information. Combining a sequence of ion gun etch cycles with XPS analyses provides quantified information as well as layer thicknesses.

2023年11月17日 · 本综述旨在向普通材料读者介绍离子蚀刻技术在 xps 深度分析中的典型应用。 根据溅射源，离子刻蚀技术可分为单原子离子束（MAIB）、气体团簇离子束（GCIB）和MAIB+GCIB模式，本文总结了这些模式在过去三十年取得的进展。