This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.

下载FQA9N90C-F109中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

FQA11N90-F109 Description This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.

onsemi's FQA13N80-F109 is a trans mosfet n-ch 800v 12.6a 3-pin (3+tab) to-3p tube. in the fet transistors, mosfets category. Check part details, parametric & specs updated 03-MAR-2025and download pdf datasheet from datasheets.com, a global distributor of electronics components.

Channel QFET® MOSFET 900 V, 6 A, 2. 3 Ω Features 6 A, 900. 00% Avalanche Tested RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor .

FQA11N90C-F109 onsemi / Fairchild MOSFET 900V N-Ch Q-FET advance C-Series 資料表、庫存和定價。

来自 onsemi 的 FQA9N90C-F109 – 通孔 N 通道 900 V 9A（Tc） 280W（Tc） TO-3P。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

FQA6N90C-F109 onsemi / Fairchild MOSFET 900V N-Ch Q-FET advance C-Series 数据表, 库存, 价格.

This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. RDS(on) = 380 m (Max.)

FQA9N90C-F109 by Onsemi is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 36A and EAS of 900mJ, making it suitable for high-power operations.