IRF9530NPBF_Infineon (英飞凌)_IRF9530NPBF中文资料_PDF手册_ …
下载IRF9530NPBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。
IRF9530N - Infineon Technologies
-100V Single P-Channel Power MOSFET in a TO-220 package.
F9530N Datasheet (PDF) - International Rectifier
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
f9530n场效应管参数 - 百度文库
F9530N是一种常见的场效应管型号，本文将对其参数进行详细介绍和解析。 2. 参数说明. F9530N是一种N沟道增强型MOSFET（Metal-Oxide-Semiconductor Field Effect …
F9530N Datasheet, IRF9530N, International Rectifier
F9530N Description. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p.
IRF9530NPBF-VB_MOSFET产品应用与参数解析_f9530n场效应管参 …
2023年10月18日 · - 电源开关：IRF9530NPBF在电源开关模块中可用作主要器件，实现电源的控制和转换。 - 电机控制：适用于需要 控制电机 转动的模块中，提供稳定的功率放大和驱动能 …
IRF9530N,IRF9530N pdf,IRF9530N中文资料,IRF9530N引脚 …
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and …
F9530N Datasheet, PDF - Alldatasheet
F9530N Datasheet. Part #: F9530N. Datasheet: 113Kb/8P. Manufacturer: International Rectifier. Description: Power MOSFET (Vdss=-100V, Rds (on)=0.20ohm, Id=-14A). 1 Results.
F9530N IR Transistors - Veswin Electronics
The F9530N from IR manufacturer is a FETs - Single with Trans MOSFET P-CH Si 100V 14A. More details for F9530N can be seen below.
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