-100V Single P-Channel Power MOSFET in a TO-220 package.

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Download F9530N Datasheet. File Size: 113.13 Kbytes. Part #: F9530N. Description: Power MOSFET (Vdss=-100V, Rds (on)=0.20ohm, Id=-14A). Manufacturer: International Rectifier.

F9530N Description. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance p.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Maximum Effective Transient Thermal Impedance, Junction-to-Case.

F9530N Datasheet. Part #: F9530N. Datasheet: 113Kb/8P. Manufacturer: International Rectifier. Description: Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A). 1 Results.

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下载IRF9530NPBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。