Abstract: This work comprehensively investigates the self-heating effects (SHEs) in Tree-FET at 5nm technological nodes. A comparative analysis of Tree-FET with Nanosheet FET (NSFET) shows that the Tree-FET (3-channel+2-bridge) is more or less comparable to the 5-channel NSFET rather than with 3-channel NSFET.

2024年11月1日 · The Tree-FET demonstrates an exceptional on/off current ratio of 10 7 through meticulous engineering, significantly outperforming conventional FET configurations. Our comprehensive study explores the effects of different spacer materials, including HfO 2 , Al 2 O 3 , Si 3 N 4 , and SiO 2 , across varied channel lengths.

Abstract: In this article, the comparison of nanosheet (NS) FET, CombFET, and TreeFETs at advanced technology nodes is performed. Initially, the DC metrics like ION , ION/IOFF and ID −VDS are dominated by TreeFET compared to Comb and NSFET. The TreeFET exhibits higher ION and ensures high-performance (HP) applications at advanced nodes.

Overall, this article pioneers the incorporation of spacer analysis in JL-TreeFET, unveiling its potential for pushing the boundaries of performance and efficiency in modern semiconductor devices. This article for the first time explores the effect of different spacer materials on junctionless (JL) TreeFET for the IRDS sub-5-nm technology node.

2023年3月24日 · tree-shaped junctionless NSFET, Si channel tree-type reconfigurable FET s and Si-SiGe chan-

2022年12月9日 · 这项工作全面研究了 5 纳米技术节点 Tree-FET 的自热效应 (SHE)。 Tree-FET 与 Nanosheet FET (NSFET) 的比较分析表明，Tree-FET（3 通道+2 桥）或多或少与 5 通道 NSFET 具有可比性，而不是与 3 通道 NSFET。

2025年1月28日 · This paper explores the impact of spacer materials on the performance of a dual-material (DM) junctionless (JL) Tree-FET device, analyzing its direct current (DC) and analog/radio frequency (RF) characteristics.

摘要 环栅树状场效应晶体管 (GAA-TreeFET)是一种在纳米片结构中引入鳍型内桥沟道的新型环栅器件,可以在相同平面面积上实现更大的驱动电流。 基于Sentaurus TCAD数值仿真,构建了TreeFET结构模型,通过改变其... 展开更多 环栅树状场效应晶体管 (GAA-TreeFET)是一种在纳米片结构中引入鳍型内桥沟道的新型环栅器件,可以在相同平面面积上实现更大的驱动电流。 基于Sentaurus TCAD数值仿真,构建了TreeFET结构模型,通过改变其内桥宽度 (WIB)和内桥高度 …

背景技术： 2.树型晶体管(tree fet)在纳米结构的沟道区释放过程中保留了部分牺牲层作为tree fet器件的支撑结构，可以降低在纳米结构较宽情况下形成栅堆叠结构时的填充要求。并且，该支撑结构也可以作为导电沟道的一部分，实现对器件载流子迁移率和驱动电流 ...

2022年12月9日 · Self-heating effects (SHEs) of multi-nanosheet FET (mNS-FET) at the 3-nm technology node were analyzed at the device and circuit level considering the introduction of punchthrough-stopper (PTS...