The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz

2024年12月13日 · 用仪器测试bf987+2sc3355性能更好，但实际收听效果差不多。 3SC3355+2S3355增益34dB以上,灵敏度-109dbm。 BF987+2SC3355增益33dB以上，但灵敏度可以达-112dbm。

The 2SC3355 NPN High-Frequency Low-Noise Transistor is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF, and CATV band. It has a large dynamic range and good current characteristics.

The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.

2SC3355 NPN SILICON EPITAXIAL TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw QW-R201-036.G ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector current IC 100 mA SOT-89 500 mW

The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.

Description: HIGH FREQUENCY LOW NOISE AMPLIFIER. Manufacturer: Unisonic Technologies.

是一种NPN硅外延晶体管，专为甚高频、UHF和CATV频段的低噪声放大器而设计。 具有兰格动态范围和良好的电流特性. 低噪声和高增益 1.1 dB TYP. 8.0 dB TYP. @VCE = 7 mA， = 1.0 GHz 1.1 dB TYP.， 9.0 dB TYP. @VCE = 40 mA， = 1.0 GHz 高功率增益 MAG 11 dB TYP. @VCE = 20 mA， = 1.0 GHz. 包装图（单位：mm）是一个P通道垂直MOS FET，可用作开关元件。 2SJ358. 静电放电噪声剪裁二极管（双型，阳极通用）3针迷你模具产品系列是专为E.S.D（静电放电） …

Silicon NPN RF Transistor 2SC3355 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1.0 µA IEBO Emitter Cutoff Current VEB = 1V; I C= 0 1.0 µA hFE DC Current Gain IC= 20mA ; V CE = 10V 50 300

2SC3355 Renesas Electronics 中文资料PDF, 共 (10)页, 2SC3355参数资料, NPN外延硅晶体管RF高频低噪声放大 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION。