此类双 N 和 P 沟道增强型功率 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适合最大程度降低导通电阻，同时保持卓越的开关性能。 此类器件适用于需要线内低功率损耗和快速开关的低压和电池供电应用。 FDS8858CZ由onsemi (安森美)设计生产，立创商城现货销售。 FDS8858CZ价格参考￥5.33。

3 天之前 · FDS8858CZ onsemi / Fairchild MOSFETs 30V Dual N & P-Ch PowerTrench MOSFET datasheet, inventory, & pricing.

FDS8858CZ – Mosfet Array 30V 8.6A, 7.3A 900mW Surface Mount 8-SOIC from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

These dual N and P-Channel enhancement mode power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

FDS8858CZ Dual N & P-Channel PowerTrench ® MOSFET. www.onsemi.com. 2. Electrical Characteristics. T. J = 25°C unless otherwise noted. Symbol

来自 onsemi 的 FDS8858CZ – MOSFET - 阵列 30V 8.6A，7.3A 900mW 表面贴装型 8-SOIC。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

onsemi 的 FDS8858CZ – MOSFET - 陣列 30V 8.6 A、7.3 A 900mW 表面黏著式 8-SOIC。 DigiKey 提供數百萬款電子元件的價格及供貨情況。

Part #: FDS8858CZ. Download. File Size: 311Kbytes. Page: 10 Pages. Description: Dual N & P-Channel PowerTrench짰 MOSFET N-Channel: 30V, 8.6A, 17.0m廓 P-Channel: -30V, -7.3A, 20.5m廓. Manufacturer: Fairchild Semiconductor.

View datasheets for FDS8858CZ by ON Semiconductor and other related components here.