Between 1911 and 1914, the Royal Aircraft Factory used the F.E.2 ("Farman Experimental 2") designation for three quite different aircraft that shared only a common "Farman" pusher biplane layout. The third "F.E.2" type was operated as a day and night bomber and fighter by the Royal Flying Corps during the First World War.

2024年9月1日 · The FeSFET with 2D FE semiconducting channel can address the above-mentioned challenges of FeFET, specifically insufficient retention and large depolarization field. Its structure is comparable to the FeFET, with the substitute of the ferroelectric material becoming the channel, and non-FE dielectric induces field effect on channel conductance.

2022年7月6日 · Ferroelectricity (FE) and antiferroelectricity (AFE) are correlated physical phenomena that, in the two-dimensional (2D) limit, exhibit unprecedented rich physics in terms of polarization creation, stabilization, and switching. By modulating the proximity effect of polarization, 2D FE and AFE can unexpectedly demonstrate reversible transformations.

2024年12月30日 · Exploring long-range magnetic order in two-dimensional (2D) ferromagnets down to thickness limit is crucial for advancing fundamental physics and developing novel magnetic device where the...

2024年10月30日 · Herein, we employ on-purpose defect engineering to create high-density atomic level defects on two-dimensional Fe-MOFs. The coordination number of Fe changes from 6 to 4.46, and over 28% of unsaturated Fe sites are formed in the optimized Fe-MOF.

2023年7月17日 · 研究团队通过溶剂热自组装技术巧妙地设计并获得了2D/2D Fe-Ni2P/ZnIn2S4-Vs材料。 其中，S缺陷不仅可以作为电子陷阱富集电子延长载流子寿命，而且丰富的S缺陷作为P原子的靶点有利于Fe-Ni2P在ZIS-Vs表面原位生长，两相之间紧密的界面有利于电荷定向转移。

2024年2月29日 · In this work, we study the magnetism of a single, atomically thin 2D-MOCN consisting of Fe atom centers and 9,10-dicyanoanthracene (DCA) molecular linkers forming a mixed honeycomb kagome...

2024年12月10日 · The effects of different concentrations of Fe doping on the photoelectric properties of two-dimensional (2D) CuI semiconductor are studied based on the first-principles calculation method. The results show that both intrinsic 2D CuI and Fe-doped 2D CuI are direct band gap semiconductors.

2024年7月5日 · We present a robust microwave absorber design based on the strong 2D/2D magnetoelectric coupling loss mechanism of semiconductor MOFs with ferromagnetic materials, as well as a...

2025年1月15日 · Fe/Co Bimetal-Containing Carbon Prepared from a 2D Metalloporphyrin-Based MOF for the Optimal ORR/OER Bifunction and Its Application in Zn–Air Batteries. The Fe–N 4 -based Fe single-atom catalyst exhibits high efficiency in oxygen reduction reaction (ORR) activity, while Co oxides demonstrate excellent oxygen evolution reaction (OER) activity.