2013年5月29日 · So finFET transistor widths are quantized, with greater drive currents being achieved by ganging together several discrete fins, with the same source, drain and gate. This quantization may cause flexibility issues, especially in analog design, although designers should be able to adapt to the new constraint. Increased layout dependencies

A key difference between finFET-based design and that using conventional planar devices is that the freedom to choose the device’s drive strength is reduced, especially for devices that are close to the minimum size. Drive strength can only be improved during layout by adding more fins.

2013年5月2日 · A look at some of the design and physical verification challenges of working with finFET and FD-SOI devices, including their impact on layout, DRC and LVS. As the minimum dimension of planar transistors has fallen below 90nm, their effectiveness as a true On/Off switch has been undermined by the increasing proximity of the source and drain at ...

2022年3月3日 · Articles related to tags: Layout dependent effect (LDE) In sessions at the 2015 Design Automation Conference, engineers who had worked on finFET-oriented projects revealed how the technology has changed their design practices and where others may want to think twice about making the move.

2018年1月2日 · FinFETs do not make this easier. In contrast to planar devices, finFET appear to demonstrate a two-stage form of degradation and recovery. Traditional linear models tend to encourage overdesign. However, finFETs are prone to layout-dependent BTI issues that were first uncovered in 28nm HKMG.

2013年4月22日 · Layout engineers then perform device placement, routing, in-design signoff, and extraction. In short, the basic roles of circuit designers and layout designers remain the same, but there is an ongoing and rapid exchange of information and a high degree of collaboration. Constraints flow easily between the schematic and layout environments.

2015年7月20日 · The first thing to consider when it comes to finFET design is to ask whether the migration is going to make economic sense. Afshin Montaz, engineering senior manager in Broadcom’s mixed-signal group, said in a panel organized by Cadence Design Systems on finFET design: “16nm is not for every product or every application.

Most are intended to support finFET or trigate transistor structures, although STMicroelectronics is working on an FD-SOI process that conforms to foundry-class 14nm/16nm design rules. The processes being prepared by the major pure-play foundries deploy a new generation of finFETs on a routing infrastructure based on that employed by the ...

For finFET-based processes, the additional layers are known as CA and CB. CA is used to route vertically, typically connecting the fins of the same FET together or to make power and ground connections to the transistors. CB is used horizontally within the …

2014年9月2日 · IC Validator has already been used on many 20nm and below tape-outs. It has been updated to handle finFET-specific issues such as verifying fin to fin spacing, fin widths, local layout proximity effects, and source-drain series resistance issues. It has already been proven on finFET tape-outs.