2017年2月2日 · In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to...

2019年4月10日 · We succeeded in fabricating a CoFeB/MgO-based magnetic tunnel junction (MTJ) directly on an organic flexible substrate. The MTJ shows good strain endurance while keeping the tunnel magnetoresistance (TMR) ratio of ∼100% under various strained conditions; the TMR ratio is almost unchanged up to a tensile strain of 1.2%.

2016年4月27日 · Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process.

2019年11月11日 · This study investigates the effect of high-temperature (350–500 °C) annealing on CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) directly formed on a flexible polyimide substrate, which has superior thermal tolerance.

2016年3月12日 · Here, we present flexible MgO barrier magnetic tunnel junction (MTJ) devices fabricated using a transfer printing process, which exhibit reliable and stable operation under substantial deformation of the device substrates.

2018年4月27日 · We report the development of flexible MTJs on a silicon substrate fabricated by a low-cost batch process [3]. Thereby, conventionally fabricated MTJ devices are transformed into flexible ones by thinning down the silicon wafer from 500 μm to 5 μm. This process leads to thin, bendable silicon devices, while maintaining their original performance.

2024年1月4日 · We fabricate ultra-small MTJs down to 2.0 nm and show high data retention (over 10 years) and high-speed switching at 10 ns or below in sub-5-nm MTJs. The stack design proposed here proves that...

2016年4月27日 · The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high‐performance memory components.

Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process.

2017年4月28日 · The strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results could provide useful insights for the design and engineering of novel MgO barrier MTJ-based straintronics as …