FQA38N30由onsemi(安森美)设计生产，立创商城现货销售。 FQA38N30价格参考￥14.37。 onsemi(安森美) FQA38N30参数名称：类型：1个N沟道；漏源电压(Vdss)：300V；连续漏极电流(Id)：38.4A；导通电阻(RDS(on))：85mΩ@10V,19.2A；耗散功率(Pd)：290W；阈值电压(Vgs(th))：5V。

Low Gate Charge (Typ. 90 nC) stripe, DMOS technology. RoHS compliant and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. TC = 25°C unless otherwise noted. Max. Electrical Characteristics TC = 25°C unless otherwise noted. Max.

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

FQA38N30 onsemi / Fairchild MOSFETs 300V N-Channel QFET datasheet, inventory, & pricing.

FQA38N30 – N-Channel 300 V 38.4A (Tc) 290W (Tc) Through Hole TO-3P from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. MFG CO. NXP Semiconductors.

半导小芯为您提供 FQA38N30 安森美-ONSEMI 的资料查询：安森美-ONSEMI数据手册查询，安森美-ONSEMI规格书查询，安森美-ONSEMI datasheet查询，安森美-ONSEMI IC查询、半导体查询、安森美-ONSEMI芯片查询、安森美-ONSEMI替代型号查询、安森美-ONSEMI产品、安森美-ONSEMI应用等相关 ...

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch. Since 2006. D4U Semicon. | | | |. 38N30 Description.

FQA38N30 Transistor Datasheet, FQA38N30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog