We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a moderately low …

2023年5月4日 · With the essential physics captured, FTJ figure-of-merits (FoMs) are accessed with not only tunneling electroresistance (TER), but also power consumption. Design …

We successfully fabricated three ferroelectric tunneling junction (FTJ) devices based on Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric film with different structures. All three FTJ devices can achieve the …

Device Research Conference, June 21 -24, 2015, Ohio State University CMOS compatible integrated ferroelectric tunnel junctions (FTJ) Mohammad Abuwasib1*, Hyungwoo Lee2, …

铁电隧道结（ftj）因其基于超薄铁电体自发极化方向的快速运行及其简单的两端结构而成为当前研究兴趣的主题。由于ftj具有非破坏性读出、运算速度快、能耗低和高密度集成等优点，它们最 …

MODEL: FTJ-SA-FJ - Model. D. HEX. L. CABLE. Impedance. VSWR. FTJ-SA-FJ. 22. 44. COMMON. 75 Ω

2014年7月24日 · These devices in which two electrodes sandwich a ferroelectric tunnel barrier are called ferroelectric tunnel junctions (FTJs). The tunnel transmission may be strongly …

2020年8月5日 · One of these new NVM technologies is a ferroelectric tunnel junction (FTJ): a two-terminal device where a thin ferroelectric layer is sandwiched between metals or …

Tunneling processes of ferroelectric tunnel junction (FTJ) based on metal-ferroelectric-insulator-semiconductor (MFIS) stack are studied for both n- and p-type semiconductor electrodes using …

Ferroelectric tunneling junctions (FTJs) with tunable tunneling electroresistance (TER) are promising for many emerging applications, including non-volatile memories and neurosynaptic …