2015年7月28日 · Motivated by practical application, in this work, we demonstrate epitaxial FTJ devices on Si substrates with BTO tunnel barrier with thickness varying from 1.5 to 4 nm. The dependence of TER on...

2023年7月8日 · 2023年6月6日，相关成果以“Giant Electroresistance in Hafnia-based Ferroelectric Tunnel Junctions via Enhanced Polarization”为题发表在Cell Press细胞出版社旗下期刊Device上。 背景介绍. FTJ由夹在两个电极之间的超薄铁电层组成，因其易于扩展、功耗低、非易失性且可以高 …

2024年12月5日 · In this article, we have designed an optimized ferroelectric tunnel junction (FTJ) device structure that inserts 3-nm Al2O3 between Hf0.5Zr0.5O2 (HZO) films. The Al2O3 interlayer can block the longitudinal growth of HZO grains and increase the number of ferroelectric domains.

2020年7月6日 · Our semimetal–ferroelectric vdW structure provides a new approach for achieving high giant barrier height modulation in FTJ devices, which is a critical step towards developing high-performance...

The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of ferroelectricity in fluorite-structured oxides such as HfO 2 and ZrO 2. In terms of thickness scaling, CMOS compatibility, and 3D integration, these fluorite-structured FTJs provide a number of benefits over conventional perovskite-based FTJs.

2025年1月15日 · The ferroelectric tunnel junction (FTJ) is a competitive candidate for post-Moore nonvolatile memories due to its low power consumption and nonvolatility, with its performance being strongly dependent on the conditions for contact between the ferroelectric material and the metal electrode.

2024年3月26日 · We highlight various functional device applications, including non-volatile memories, crossbar arrays, and synapses, utilizing the advantageous properties of ferroelectrics. Lastly, we address the challenges that FTJ devices currently face and propose a direction for moving forward.

We report a CMOS compatible integrated FTJ fabrication process that is scalable from micron to deep submicron dimensions. The first generation integrated FTJs show switching with peak ON/OFF ratio of 60. We also report the scalability of the ferroelectric polarization loop to …

2023年5月4日 · With the essential physics captured, FTJ figure-of-merits (FoMs) are accessed with not only tunneling electroresistance (TER), but also power consumption. Design parameters from FE layer thickness, polarizations, and coercive field to silicon doping and metal work functions are studied, with their impacts on key FTJ FoMs evaluated.

2016年2月29日 · Herein, we report complimentary electrical and optical control over the resistive switching in FTJs of Pt/Sm 0.1 Bi 0.9 FeO 3 (SBFO)/NSTO. A colossal TER of greater than 10 5 at room temperature...