Neuromorphic devices based on fluorite‐structured ferroelectrics - Lee …
The FTJ mechanism for synaptic device applications involves the gradual variation of the tunneling barrier. This allows modulation of the electroresistance by multiple polarization states that are controlled by the electric pulses from presynaptic and postsynaptic neurons.
Ferroelectric tunnel junctions with graphene electrodes
2014年11月24日 · Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)—structures composed of two electrodes separated by an ultrathin ferroelectric barrier—offers new...
Ming-Huei Lee - ResearchGate
3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and ...
A computational study of AlScN-based ferroelectric tunnel junction
2025年1月1日 · Ferroelectric tunnel junctions (FTJs) based on AlScN ferroelectric material are investigated. A multiscale simulation approach for AlScN FTJs is developed. The results show improved tunnel electroresistance (TER) ratio by using a graphene contact in the FTJ.
Device Research Conference, June 21 -24, 2015, Ohio State University CMOS compatible integrated ferroelectric tunnel junctions (FTJ) Mohammad Abuwasib1*, Hyungwoo Lee2, Chang-Beom Eom2, Alexei Gruverman3, Jonathan Bird 1 and Uttam Singisetti 1 1Electrical Engineering, University at Buffalo (SUNY), Buffalo. 2
In-plane ferroelectric tunnel junctions based on 2D α-In2Se3 ...
2023年1月13日 · Ferroelectric tunnel junctions (FTJs) have great potential for application in high-density non-volatile memories. Recently, α -In 2 Se 3 was found to exhibit...
铁电隧道结：前景、成就和挑战,Journal of Physics D: Applied …
铁电隧道结（FTJ）因其基于超薄铁电体自发极化方向的快速运行及其简单的两端结构而成为当前研究兴趣的主题。 由于FTJ具有非破坏性读出、运算速度快、能耗低和高密度集成等优点，它们最近被认为是非易失性下一代存储器的有希望的候选者。 这些特性对于满足现代计算系统中对高性能内存日益增长的需求至关重要。 在这篇综述中，我们探讨了 FTJ 的基本原理和结构，并阐明了 FTJ 成功制造和运行所需的要素。 然后，我们重点关注钙钛矿氧化物、萤石、二维范德华和聚 …
Modeling Multi-states in Ferroelectric Tunnel Junction | IEEE ...
Hence, in this paper, we fabricated and measured multi-state FTJ with on/off ratio > 100. Then, we built a device model, showing the relation between HZO polarization and multi-state current. With the simulated energy band diagrams, we have identified the reasons behind the two increasing rates of current as a function of voltage.
基于 HfO2/介电复合势垒的铁电隧道结,Applied Physics Letters - X …
铁电隧道结 （ftj） 具有结构简单、功耗低、运行速度快、无损读数等特点，在下一代非易失性存储器的应用方面引起了极大的关注。 近十年来发现的互补金属氧化物-半导体相容的氧化铪 （HfO2） 铁电薄膜有望实现 FTJ 的可扩展性和工业化。
铁电隧道结：通用存储器的现状和未来前景,Frontiers in Materials
2023年9月28日 · 最近发现铁电隧道结 (FTJ) 中的电阻开关后，该领域的研究加速了。 为了使 FTJ 取得成功，克服一些障碍非常重要，例如在临界厚度上保持铁电薄膜的双稳定性。 此外，电极和薄膜之间界面层（有时称为“死层”）的存在会影响其特性。 本文概述了半导体存储器，重点介绍了具有未来应用潜力的新兴技术。 然后详细介绍 FTJ 的优势及其无损读取能力。 本文还讨论了 FTJ 在电阻开关中的潜在用途，同时承认其缺点和限制。 克服一些障碍非常重要，例如在超过临界 …