2012年2月25日 · Detailed XPS and Auger analysis has been carried out in situ during the formation of nanostructures on GaSb surfaces under low energy Ar + beam sputtering. A model is suggested to correlate the geometry of the formed nanostructures with the elemental Ga and Sb concentrations at the surface after the ion bombardment.

1996年5月15日 · Ion bombardment effects in GaSb, InSb and CdSe crystal surfaces were studied with a combination of X-ray photoelectron spectroscopy (XPS) and low energy ion scattering spectroscopy (LEISS). Both XPS and LEISS showed that neglecting surface contamination, the composition of the crystal surfaces prior to ion bombardment were close to their ...

2017年3月31日 · The chemical state of the oxide layer on the GaSb and InSb surfaces was investigated by X-ray photoelectron spectroscopy (XPS, K-alpha, Thermo VG) with monochromatic Al Kα radiation at 1486.6 eV. XPS depth profiling with Ar ion sputtering (200 eV, raster size: 1 mm × 1 mm) was also performed to examine the …

Download scientific diagram | XPS spectra of Ga 3S and S 2p levels for the (100) GaSb surface after passivation in 10 mM ODT-C 2 H 5 OH. Deconvolution results are shown in the same figure.

2023年11月18日 · To shed light on the construction mechanism of GaSb/GeS core–shell heterostructure NWs, the X-ray photoelectron spectroscopy (XPS) spectra of typical Ga 3d, S 2p, Ge 3d, and Sb 4d are selected...

XPS Spectra Gallium (Ga) Compounds The XPS Spectra section provides raw and processed survey spectra, chemical state spectra, BE values, FWHM values, and overlays of key spectra.

2021年7月10日 · The composition of anodic sulfidization layers of GaSb and InAs, prepared by electrochemistry anodic sulfidization, are investigated by X-ray photoelectron spectroscopy (XPS). The result of composition profile of GaSb anodic sulfidization samples, studied by XPS and Ar + etching, indicates that the anodic sulfidization layers contains not only ...

对相同条件下制备的不同晶向的锑化镓抛光晶片表面化学组分进行了XPS测试比较,结果表明(110)GaSb晶片表面的氧化程度最为严重,表面极为粗糙;有极性的(111)GaSb晶面由于Ga—Sb价键存在于衬底内部,反而氧化程度较低,表面较光滑.分析比较了GaSb晶面表面化学组分与 ...

The thermal decomposition of the native GaSb oxides is studied using time resolved x-ray photoelectron spectroscopy with a temperature resolution of better than 1 K. The expected transfer

2020年2月27日 · 锑化镓（GaSb）作为新型沟道材料引起了人们的广泛关注，它可以实现高性能和低功耗互补金属氧化物半导体（CMOS）技术，因为它具有极高的空穴体迁移率（850 cm2/Vs（300K 时）、窄带隙（300K 时为 0.72 eV）以及与各种 III-V 三元和四元化合物的出色晶 …