2020年1月7日 · Abstract: Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS …

This letter presents the first GC-eDRAM in 16-nm FinFET technology, featuring a mixed-VT 3T gain-cell structure to minimize the storage node (SN) leakage. The implemented 1-Mbit 3T GC …

2023年6月2日 · GC eDRAM是一种6T SRAM和1T1C eDRAM折中选择的产物，它结合了SRAM (与数字CMOS技术兼容)和1T1C eDRAM (高存储密度)的优点，同时规避了SRAM (单元面积 …

在本文中，我们介绍了 gc-edram 建模工具 (gemtoo)，这是第一个估算 gc-edram 时序、内存可用性、带宽和面积的建模工具。 该工具考虑了与技术、电路和内存架构相关的参数，并且能够 …

2017年7月7日 · This chapter discusses the basic operation of GC-eDRAM, as well as its many advantages and few drawbacks compared to SRAM and 1T-1C eDRAM. The chapter then …

Abstract: Gain-cell embedded DRAM (GC-eDRAM) is an interesting alternative to conventional six-transistor (6T) static random access memory (SRAM) cells, offering higher density, lower …

As opposed to conventional 1T-1C eDRAM, gain-cell (GC) based eDRAM (GC- eDRAM) is fully compatible with mainstream digital CMOS technologies, since it is built exclusively from …

•The main barrier for GC-eDRAM is its limited DRT, which leads to: • Increased power consumption - • Lower availability •This gets worse with transistor scaling, as the parasitic …

This book pioneers the field of gain-cell embedded DRAM (GC-eDRAM) design for low-power VLSI systems-on-chip (SoCs). Novel GC-eDRAMs are specifically designed and optimized for …

2021年11月1日 · We analyze the potential to exploit the low leakage power and compact size of GC-eDRAM in the design of low power embedded systems. We replace the data array in an …