2008年1月1日 · Recently developed high-permittivity (k) materials have reopened the door to Ge as a channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge gate stacks are very promising for future nanoscale devices. This article reviews the opportunities and challenges of high-k/Ge MOSFET technology.

2016年6月22日 · 赵毅教授课题组近日在高性能锗器件领域取得进展，通过优化器件的源漏工程和栅极工程获得了高质量的锗沟道场效应晶体管（Ge MOSFET）器件。 相关成果发表在电子器件领域的顶级期刊IEEE Transactions on Electron Devices (10.1109/TED.2016.2564996)和IEEE Electron Device Letters...

CMOS-compatible integration approaches of Ge channel devices are presented. This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures.

2008年5月23日 · In this paper we give an overview of some of the major issues for Ge MOSFETs, including substrates, wet treatments, doping and junctions, gate stack passivations, germanidation, and postmetallization hydrogen annealing.

2006年12月15日 · We present novel, Si and Ge based heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining high channel mobility, making them suitable for scaling into the sub-15 nm regime.

2021年8月4日 · In this work, Ge nMOSFETs with ZrO 2 gate dielectric are fabricated to achieve improved μeff over Si in the entire range of inversion charge density (Qinv). Ge transistors obtain a 50% improvement in electron μeff compared to the Si …

This paper overviews the present status of Ge MOSFET technology, particularly focusing on n-FETs in terms of materials science of GeO 2 /Ge gate stacks and inversion layer mobility, and then discusses future prospects and fundamental challenges from the …

2025年1月26日 · IV族元素锗材料由于具有电子和空穴迁移率高、禁带宽度小、与硅工艺相兼容等优势，在低功耗高迁移率场效应晶体管领域具有广泛应用潜力，相应的Ge基MOSFET技术成为延续摩尔（More Moore）和超越摩尔（More than Moore）技术领域的前沿研究热点。

针对高迁移率Ge、GeSn器件关键技术，西安电子科技大学微电子学院韩根全教授、浙江大学微纳电子学院张睿副教授团队展开了深入研究。提出了后氧化（postoxidation）制备高质量超薄界面钝化层、表面Si钝化等一系列迁移率提升技术。

2012年9月7日 · 锗(ge)材料具有优异的电子和空穴迁移率，是超高速、低功耗mos器件的理想沟道材料。 对于高性能的MOS器件而言，良好的界面对于提升MOS器件的迁移率非常重要，由于high-k/Ge的界面稳定性较差，在界面处存在的大量的缺陷形成载流子的散射中心，阻碍了高迁移率 ...