MACOM’s GaN MMIC portfolio stands at the forefront of industry performance, backed by over 30 years of proven expertise in aerospace and defense system design. Leveraging both GaN-on-SiC and GaN-on-Si process technologies, MACOM enables next-generation system architectures across a wide range of applications—from phased array radars to ...

In this work, we leverage 180 nm and 140 nm GaN technology to demonstrate MMIC chipsets covering the 4-18 GHz, 32-38 GHz, and 26-40 GHz frequency bands, achieving power as high as 40W and exceeding the current state of the art for output power per chip.

2015年11月30日 · In this paper we present an overview of GaN MMIC technology, focusing on device characteristics, reliability, and high frequency performance. We also introduce emerging GaN technologies such as GaN-on-diamond and the heterogeneous integration of …

2024年4月29日 · 文献报道了一款K波段收发多功能GaAsMMIC芯片,基于0.15μm GaAs pHEMT功率工艺制作,接收支路在19.6~23.0GHz内增益大于23 dB,增益平坦度为士0.2dB,噪声系数低于3.5dB;发射支路在21~23GHz增益大于25.6 dB,饱和输出功率为23.3dBm,效率达到25.2%。 该多功能芯片接收/发射由单刀双掷开关控制。 2015年彭龙新等使用0.15μm GaAspHEMT 功率工艺研制了毫米波高性能收发多功能芯片 (如图1)。 由于频率较高功率较大,发射/接收切换开关外接。 …

2024年7月3日 · A millimeter-wave (mmWave) gallium nitride (GaN) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) was implemented, considering a source via effect.

2024年7月30日 · GaN MMIC PAs are becoming more prevalent in the market with more frequency options and choices of bare die and packaged MMIC PA products than ever before. For more information, visit our power device web page and check out our GaN-on-SiC products .

2023年7月27日 · In this letter, an S-band high-efficiency continuous Class-F (CCF) GaN monolithic microwave integrated circuit (MMIC) power amplifier (PA) implemented in 0.25- μ m GaN-on-Si technology is presented. A novel harmonic matching network (HMN) for CCF MMIC PA is proposed, which can achieve fundamental, second, and …

2025年2月27日 · In this work, a three-stage ultra-wideband and high-efficiency monolithic microwave integrated circuit (MMIC) power amplifier (PA) from 17 to 41 GHz has been designed and realized. The available bandwidth, efficiency, output power, and drain voltage of the transistor have been thoroughly considered during the PA design.

0.25µm GaN HEMT MMIC process Process main features GH25 Gallium Nitride process is optimized for high power amplification up to 20GHz. Supported by a thermally dissipative SiC substrate, the GH25 power density reaches 4.5W/mm. This MMIC process includes MIM capacitors, inductors, air bridges, metallic resistors, via through the

2015年8月1日 · A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA) is reported. In order to manage coupling effects between all the parts of the W-band MMIC, all matching and bias networks have been first optimized using circuit simulating software and then systematically simulated on 3D full-wave electromagnetic simulator.