Abstract: A new high energy implanter, the NV-GSD-HE3, improving upon the design concepts of the industry-leading GSD/HE series, has been developed in order to meet new and future device process requirements. Besides processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency ...

Axcelis ® GSD/HE ™ and VHE ™ systems were designed to deliver exceptional productivity, lowest COO, and unmatched process flexibility. The tools provide the broadest range of ion implantation capability, from 10keV to 5MeV, to perform retrograde well, double well, triple well, channel and buried layer implants.

2023年3月1日 · The GSD platform is the industry benchmark for the longest manufactured and supported batch ion implanter. The Ovation™ is the latest batch configuration designed to seamlessly integrate with the existing fleet of Axcelis batch implanters, while providing incremental performance improvements with updated components for long-term sustainability.

Area：Ion Implant MFG：Axcelis/Eaton Type：NV-GSD/HE-VHE. HIGH ENERGYION IMPLANTER SUMMARY SPECIFICATION

2011年1月7日 · The UHE is an ultra‐high energy implanter developed by SEN Corporation. It was derived from the NV‐GSD‐HE3 by adding six RF resonators to the beam line. This extends performance so that singly...

AXCELIS NV-GSD HE. Wafer size. 200mm / 8" 1. SOURCE Module. Gas Box: Gas line #1: HP(Ar) Gas line #2: HP (BF3) Gas line #3 : SDS PH3 Gas line #4: SDS ASH3 Isolation transformer type: OIL type. 2. Injector MODULE Source type : ELS / Non-Vaporizer Extraction electrode type : 3-Axis electrode

eaton nova/axcelis nv gsd-he是一种离子植入器和监测器，具有先进的高功率射频和激光技术，用于各种植入物应用的精确、均匀的植入物深度、剂量控制和可重复操作。

中国科学院苏州纳米技术与纳米仿生研究所拥有落锤冲击试验机、3D共聚焦显微镜、DxFLEX流式细胞仪、场发射透射电镜、光电测试系统、飞行时间二次离子质谱仪、Loomis解理机激光器（B402）、燃料电池测试仪、旋转涂布机、超大压力键合机等科研仪器。

EATON NOVA / AXCELIS NV GSD-HE is an advanced ion implanter and monitor with high-performance features such as a high-efficiency ion source, adjustable shutter, and real-time monitoring systems, allowing users precise and uniform implantation of ions up to 500 keV for a variety of different applications.

The NV-GSD/VHE delivers beam currents of B+ in excess of 1 pmA at energies approaching 1.7 MeV, B++ to energies approaching 3 MeV and P+++ energies approaching 5 MeV. The beamline of the NV-GSD/VHE is designed to be field upgradeable to further extend the energy ranges of all species, if required, to match future process requirements.