2018年1月18日 · We investigate the various cation substitutional dopants in Ga 2 O 3 for the possibility of p –type conductivity using density functional theory. Our calculations include both …

2020年5月1日 · The lack of p-type Ga 2 O 3 limits its application for optoelectronic devices. Although nitrogen is a common acceptor dopant for oxides, the presence of midgap level, …

2021年10月5日 · We show that p-type doping is achievable for both polymorphs of Ga 2 O 3 by the introduction of gallium vacancies or oxygen vacancies with accompanying Ga H …

2025年1月1日 · Advancements in optoelectronics necessitate effective p-type doping strategies for β-Ga 2 O 3, yet traditional experimental and computational methods have shown significant …

2018年1月11日 · Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with c

2025年1月15日 · A metal/n-Ga 2 O 3 /p-diamond heterojunction diode with superior high-temperature performance was demonstrated in this work. The p-type diamond was lightly …

The lack of p-type Ga 2 O 3 has become a great obstacle to fabricate a full Ga 2 O 3-based p–n homojunction for high-performance device applications. We demonstrate that N-doped β-Ga 2 …

2024年12月6日 · 本文针对β-Ga2O3的p型导电问题，系统阐述了β-Ga2O3电子结构，实验表征及理论计算掺杂能级方法，p型掺杂困难原因，以及改进p型掺杂的突破性研究 ...

2024年5月20日 · In this work, we study p-type N-doped α-Ga2O3 by first-principles calculations with generalized gradient approximation (GGA) + U method. The N foreigner can easily …

2024年12月10日 · 本文 针对 β-Ga2O3的 p 型导电问题，系统阐述了 β-Ga2O3电子结构，实验表征及理论计算掺杂能级方法，p 型掺杂困难 原因，以及改进 p 型掺杂的突破性研究进展。