1999年3月1日 · Invention of scanning tunneling microscopy (STM) has revolutionized the approach of surface/interface investigation, contributing greatly in the atomistic understanding of the GaAs surface phases. This paper reviews the STM studies of principal reconstructions, from As-rich c (4×4), 2×4, 2×6 to Ga-rich 4×2 and 4×6, found on the GaAs (001) surface.

2023年2月23日 · Low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/S) demonstrates a well-ordered large-scale honeycomb structure, consisting of Bi atoms in a √3 × √3 30° reconstruction on GaAs (111). X-ray photoelectron spectroscopy shows that the Bi atoms of the honeycomb structure only bond to the underlying As atoms.

Early studies focussed on problems of pn doping superlattices, defects in low-temperature-grown GaAs, and interface structure in InAs/GaSb superlattices. At CMU, the group of Prof. Feenstra has continued this research program in cross-sectional STM. Systems which have been studied include GaN layers in GaAs, and InGaAsP/InGaP laser structures.

2022年5月24日 · In this work, we investigated the structure and morphology of the MBE-grown MoTe 2 monolayer on GaAs(111)B using scanning tunneling microscopy (STM), electron diffraction, and X-ray...

2016年1月27日 · Theoretical scanning tunneling microscopy (STM) images for all group-III and -V dopants on the GaAs (110) surface are calculated using density functional theory (DFT). In addition, a geometrical model based on the covalent radii of the dopants and substrate atoms is used to interpret the images.

从原子级平坦的GaAs (001)-β2 (2×4)重构表面出发,结合Reflection High Energy Electron Diffraction (RHEED) 衍射图像演变和不同尺度的Scanning tunneling microscope (STM) 实空间扫描图像,获取GaAs (001)薄膜表面形貌相变和表面重构的重要信息,深入地研究GaAs (001)表面形貌相变和表面重构的相互促进关系。

2011年2月10日 · Often a “naive” interpretation of the STM image can yield an incorrect surface structure. We illustrate this situation via ab initio pseudopotential calculations for the STM image of the (110) GaAs surface. We will compare theoretical STM images to experimental images for the relaxed surface and for a surface with an As vacancy.

2002年7月1日 · Scanning tunneling microscopy (STM), with its ability to characterize the structure and electronic properties of a surface at the atomic scale, will thus be a useful tool for investigation of the GaAs surface reconstructions prepared by sputtering and annealing.

利用扫描隧道显微镜（STM）系统地研究了C60薄膜在GaAs（001）表面的异质外延生长．在GaAs（001）2×4-β相表面，观察到C60薄膜以非密排面进行生长，并在生长中有结构相变产生．实验数据表明，薄膜下层面心立方（fcc）的晶格常数比C60晶体的晶格常数要大13%；而 ...

2001年5月20日 · Spin-polarized electron beam experiments belong to one of the most important experimental methods for understanding spin-dependent phenomena in solid state physics and also high energy physics. p-GaAs is now practically …