2004年1月15日 · V-shaped pits are observed on the surface of the undoped GaN grown at IT by atomic force microscopy analysis. Two beam images by transmission electron microscopy show that only screw- and mixed-type component of dislocations contributes to pit formation.

2018年7月23日 · Our findings suggest the potential of implementing optimized V-pits embedded in an InGaN/GaN SL or low-temperature GaN structure as a beneficial underlying layer for the realization of highly...

We achieved the highest output power and lowest leakage current values with the LED structures comprising V-pits embedded in active regions and the p-GaN textured surface. The V-pit formation enhances the light output power and reverse voltage values by 1.3 times the values of the conventional LED owing to the enhancement of the light ...

2020年4月17日 · In this study, we systematically analyzed GaN LED structures on patterned sapphire substrates (PSSs) with two types of growth temperature employed for prestrained layers and three different thickness of n-type GaN layers by using cathodoluminescence (CL), microphotoluminescence (PL), and depth-resolved confocal Raman spectroscopy.

2016年4月20日 · Early work suggested that the surface steps in the sapphire substrate would affect the pit formation mechanism, however, nowadays, GaN epitaxial films are grown by a two-step procedure, which introduces a buffer layer in-between the …

2022年11月30日 · The Am-GaN growth on HVPE-GaN with pit-type defects is investigated. The back etching, ammonothermal regrowth and annihilation processes of the pit-type defects are elucidated by surface morphology and cross section observation. In the annihilation process, the {11−20} planes grow toward the inside of the fi

Abstract: Gallium nitride (GaN) displays potential in the field of gas detection owing to its physical and chemical properties, such as high electron mobility, wide bandgap, and strong chemical stability. Herein, abundant V-pits on GaN (V-GaN) were successfully fabricated by KOH etching to develop a highly selective and stable NO2 gas sensor ...

2020年9月1日 · Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency

有V-pits存在的InGaN/GaN MQW结构,在(10-11)方向形成的半极性MQW,它的势能比较高,因此可以有效的防止载流子扩散到缺陷内,进而减少非辐射复合,另外,空穴会通过半极性面进入C面量子阱,因此多了一个空穴的注入通道,空穴可以在量子阱内扩散的更远,有效的改善因电流 ...

2019年7月15日 · In this work typical V-pits in gallium nitride (GaN) grown by hydride vapour phase epitaxy (HVPE) were investigated by different electron microscopy techniques. Based on this experimental analysis the origin of V-pits is theoretically motivated and discussed.