300 nm GaN XPS spectra and fits of (a) Ga 2p (b) Ga 3d (c) VBM.
Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy...
XPS study of a selective GaN etching process using self-limiting …
2020年5月1日 · In this paper we propose to evaluate the performance of a self-limited GaN etching process using a cyclic etch approach based on O 2 plasma followed by BCl 3 plasma, for power device applications. After a process optimization on blanket wafers, the proposed etching cycles have been tested on patterned structures.
XPS modeling of GaN/GaAs nanostructure grown by the droplet …
2022年12月1日 · X-ray photoelectron spectroscopy (XPS) measurements were performed in situ after all three steps of GaN/GaAs (111)A droplet epitaxy in an ultrahigh vacuum photoelectron spectrometer equipped with an Omicron DAR 400 X-ray source and an Omicron EA 125 hemispherical analyzer calibrated using the method described in reference [48].
XPS spectra of all samples. Ga 3d XPS spectra for (a) GaN, (c) GaN…
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of...
Gallium Spectra – GaN - The International XPS Database 1
XPS Spectra Gallium (Ga) Compounds The XPS Spectra section provides raw and processed survey spectra, chemical state spectra, BE values, FWHM values, and overlays of key spectra. Atom% values from surveys are based on sample, as received, and Scofield cross-sections. Atom% values are corrected for IMFP and PE.
Detailed XPS scans of N1s, Ga3d and O1s peaks showing
Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic...
Precise determination of surface band bending in Ga-polar n-GaN …
2019年11月18日 · In this paper, Ga-polar n-GaN samples with different Si doping densities have been studied by using ADXPS. Ga 3d core level spectra were evaluated correctly by considering the band bending due to...
Chemical Visualization of a GaN p-n junction by XPS
2015年9月11日 · We report on an operando XPS investigation of a GaN diode, by recording the Ga2p 3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are...
Effects of Mn Ion Implantation on XPS Spectroscopy of GaN
2017年11月29日 · Gallium nitride (GaN) thin film was deposited onto a sapphire substrate and then implanted with 250 keV Mn ions at two different doses of 2 × 10 16 ions/cm 2 and 5 × 10 16 ions/cm 2. The as-grown and post-implantation-thermally-annealed samples were studied in detail using x-ray photoelectron spectroscopy (XPS).
Investigation of metal–GaN and metal–AlGaN contacts by XPS …
2001年9月1日 · In this paper, we report a study of metal–GaN and metal–AlGaN contacts by X-ray photoelectron spectroscopy (XPS) depth profiling as well as I – V and C – V measurements. Depth resolution is slightly worse in XPS compared to Auger depth profiles, but it is easier to identify different chemical bonds at the interface.