This novel gate cut (CT) technique allows the scaling of gate extension length past the end fin which reduces parasitic capacitance, leakage and performance variation. In addition, we …

As the development of semiconductor devices, especially for 28 nm technology node and beyond, the shorten effect in line ends of poly gate will be challenging as the size grow smaller, …

在一个晶体管内，gate contact（栅接触点）是源极（source）到漏极（drain）电流的控制点；gate contact 就连接上层的 via 导孔了。 一般来说，gate contact 会伸到单元之外的地方（虽 …

In this work, atomic layer deposition (ALD) metal films, including TaN, TiN (TiSiN), TiAl and CVD W, were studied for replacement metal gate application. Challenges of step coverage & gap …

2012年2月1日 · In this study, we extend the scaling using simplified OPC beyond 20nm in small steps, eventually reaching the 16nm node. The same "cut" pattern is used for each set of …

2020年11月23日 · The gate cut last has been widely adopted since it can provide better SiP/SiGe growth environment, hence yielding the better electrical performance. However, this approach …

2020年3月28日 · ICC2 支持cut metal技术从P&R到signoff的实现。 通常Layer 1 的cut metal只能插在固定的位置( preferred grid )，Layer 2cut metal无固定位置（请具体参照对应工艺）。 下图 …

2020年11月18日 · The metal gate cut (MGC) will be widely adopted since it can provide better SiP/SiGe growth environment, improve yield and enhance electrical performance. However, …

Continuous process window modeling for process variation aware OPC and lithography verification; The calibration of process window model for 55-nm node; Cutting Force Changes …

2014年2月24日 · Experimental demonstration of these cut layers using design optimization, OPC-Lite, and conventional illuminators at the 7nm node dimensions will be presented. Lines were …