2023年6月1日 · Comparison of calculated DOS below 0 eV with XPS experimental data. The phase diagram of the Gd2 S 3 -GdF 3 system has been constructed. The balance equations for five phase transformations in the system, recorded by the DSC method, are compiled.

2015年7月8日 · XRPD suggests cubic Th3P4-type structure for obtained Gd2S3 nanoparticles. The size of synthesized nanoparticles is about 86 nm. Optical band gap for these nanoparticles estimated from electronic spectrum is 2.95 eV which shows blue shift from values reported for bulk Gd2S3 due to pronounced quantum mechanical effect.

1993年12月15日 · 磁性半导体材料 Gd 2 S 3 (=Gd 3- x V x S 4 ，其中 V 表示空位，x = 1/3) 的反射光谱在 2 meV 到 40 eV 的能量范围内在 9, 20 , 77 和 300 K。 从光导率和光电子光谱之间的比较，获得了占据和未占据电子态的能量位置和形状。 高于 77 K，该材料显示出金属反射光谱，但在低于 20 K 的费米能 级上打开了约 7 meV 的能隙。 推断非金属-金属过渡的起源源于磁极化子态 …

1999年12月1日 · Nanophase γ-Gd 2 S 3 polycrystalline thin films were deposited by a so-called asynchronous pulse ultrasonic spray pyrolysis method on glass substrates at relatively low temperature without any complexing agent. The films were characterized by X-ray diffraction, scanning electron microscopy and Raman spectrum.

1999年12月1日 · High pressure behavior of γ-Gd2S3 (I43d, Z=4) is studied with X-ray diffraction, Raman spectroscopy, and optical reflectivity. Upon compression to 30 GPa there is no structural phase transition. The pressure dependence of the infrared transparency in this material to 30 GPa is determined from its bulk modulus, extracted from the X-ray data ...

2016年5月6日 · Gadolinium sulphide (Gd2S3) is a magnetic semiconductor with large band gap. Gd2S3 was synthesized following chemical and green techniques. Later process provides good...

In this study, Gd2O2SO4:Eu 3+ nanoparticles were synthesized by sol-gel method and were calcined at 950 o C in argon gas atmosphere. In the analysis of the produced nanoparticles XRD, SEM, XPS and optical luminescence devices were used to evaluate the results.

This paper presents the effect of substrate temperature and oxygen partial pressure on the photoluminescence (PL) intensity of the Gd 2 O 2 S:Tb 3+ thin films that were grown by using pulsed laser deposition (PLD). The PL intensity increased with an increase in the oxygen partial pressure and substrate temperature.

2018年5月14日 · 通过拉曼光谱法和磁化率法拉第法检查了Gd 3+和S 2−环境的晶格和对称环境的短程扰动，证实了这一观察结果。 因此，由于声子的平均自由程减小，倍半硫化g的热扩散率降低。 结果，多晶样品的热导率降低了10％。 The heat capacity , thermal diffusivity χ T, and lattice thermal conductivity κ latt of ceramic solid solutions of sesquisulfides Gd 3‐ G d, S (0 < < 0.33) in the temperature range 300‐700 K has been studied.

2023年6月1日 · Comparison of calculated DOS below 0 eV with XPS experimental data. The phase diagram of the Gd 2 S 3 -GdF 3 system has been constructed. The balance equations for five phase transformations in the system, recorded by the DSC method, are compiled.