2018年9月1日 · Based on theoretical calculations and experimental validation, a GeP 3 compound is introduced for the first time as a promising anode material for sodium-ion batteries, indicating a high capacity and cyclic stability determined by first-principles calculations about its softened structure and related innovative mechanical endurance during charge...

2017年2月27日 · Here, we develop a simple and large scale method to prepare nanostructured GeP 3 /C composite in which layer structured GeP 3 nanoparticles are in-situ formed and embedded by carbon layer. The...

Raman and X‐ray diffraction (XRD) measurements indicate that the interlayer interactions are dramatically modulated under compression, along with the deformation of local In–P bipyramid ...

Here, we develop a simple and large scale method to prepare nanostructured GeP3/C composite in which layer structured GeP3 nanoparticles are in-situ formed and embedded by carbon layer. The...

2017年1月26日 · We propose a two-dimensional crystal that possesses low indirect band gaps of 0.55 eV (monolayer) and 0.43 eV (bilayer) and high carrier mobilities similar to those of phosphorene, GeP 3. GeP 3 has a stable three-dimensional layered bulk counterpart, which is metallic and known from experiment since 1970.

2024年4月1日 · Herein, a novel P-doped pitch carbon (PPC)-GeP 3 composite anode was prepared by pyrolysis of coal tar pitch precursor and then ball-milling, exhibiting excellent electrochemical performance in SIB. The fused, secondary GeP3 -PPC particle was formed during high energy milling coupled with P-C/P-O-C bond constructed.

Monolayer GeP3 and InP3 exhibit different polarization-resolved and helicity-resolved Raman spectra and Raman-active phonons are categorized as a guidance for experiment. Monolayer XP3 (X = Ge, In) is a theoretically predicted two-dimensional (2D) material with fascinating adsorption efficiency, foreshadowing its potential applications in the ...

(f) Raman spectra of GeP3 and GeP5 at ambient pressure. The dashed lines mark the positions of Lorentzian Raman peaks. from publication: Pressure-driven Superconductivity in Layered...

2024年4月19日 · Experimental and calculated Raman investigations coherently show that the most intensive mode is connected to a vibration of the Ge–Ge unit. Furthermore, we investigated the electronic structure with theoretical methods and revealed that Na 3 Ge 2 P 3 is an indirect band gap semiconductor.

2021年3月1日 · Using first-principles calculations, we explored the adsorption effects on the electronic and magnetic properties of halogen atoms (F, Cl, Br, and I) on monolayer germanium triphosphide (GeP 3). After adsorption, the binding energies of all adsorbed systems are extremely low, which implies a remarkable thermodynamic stability.