GeSn Defects and their Impact on Optoelectronic Properties: A …
2023年9月19日 · GeSn has emerged as a promising semiconductor with optoelectronic functionality in the mid-infrared, with the potential of replacing expensive III-V technology for …
Review of Si-Based GeSn CVD Growth and Optoelectronic Applications
In recent decades, GeSn alloys have demonstrated novel indirect-to-direct bandgap transition, as well excellent carrier transport. Due to their tunable band structures, GeSn materials have …
Recent progress in GeSn growth and GeSn-based photonic devices
2018年6月1日 · The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content exceeds 6%. It shows great potential for laser use in optoelectronic …
Defect-free high Sn-content GeSn on insulator grown by rapid …
2016年12月12日 · Here, we reported a single-crystal defect-free graded GeSn on insulator (GSOI) stripes laterally grown by rapid melting growth (RMG). The Sn-content reaches to …
Growth and applications of GeSn-related group-IV semiconductor ...
2015年7月28日 · We review the technology of Ge 1− Sn -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge 1− Sn -related materials provide novel …
Investigation of GeSn Strain Relaxation and Spontaneous Composition ...
2018年4月4日 · Recent development of group-IV alloy GeSn indicates its bright future for the application of mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn …
Growth and Strain Modulation of GeSn Alloys for Photonic and
2022年3月16日 · GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic …
Electro-absorption modulation in GeSn alloys for wide …
2021年4月9日 · Here, we demonstrate the Franz-Keldysh effect in GeSn alloys and achieve mid-infrared electro-absorption optical modulation using GeSn heterostructures on silicon.
Material characterization and device simulation of GeSn alloys …
Abstract: GeSn alloys are promising materials for electronic device applications. In this paper, GeSn samples with relatively high Sn composition are characterized in detail.
Theoretical Analysis of GeSn Quantum Dots for Photodetection
2024年2月16日 · Although various photonic devices based on GeSn thin films have been developed, low-dimensional GeSn quantum structures with improved efficiencies hold great …