2016年4月25日 · Mid and far infrared (FT-IR) test suggests that the transmission of the GeSn films get improved for about 46% when the substrate temperature increases from 200 to 450 °C. Terahertz transmission of the GeSn samples also improved with a maximum rising rate of 25%/50 °C as the substrate temperature increases.

2024年12月15日 · By integrating the fabricated GeSn PD with Fourier transform infrared (FTIR) spectroscopy, we demonstrate its ability to detect and resolve weak photoluminescence (PL) signals from indirect-bandgap Ge semiconductors. These results confirm the potential of GeSn PDs for use in sensitive IR spectroscopy. 2 Results and Discussion

2023年8月24日 · The performance of GeSn PDs is highly dependent on the Sn composition and operation temperature. Here, we develop theoretical models to establish a simple rule of thumb, namely “GeSn−rule 23”, to describe GeSn PDs’ dark current density in terms of operation temperature, cutoff wavelength, and Sn composition.

2023年10月28日 · In this work, optically pumped mid-infrared GeSn lasers were studied with the observation of dual-wavelength lasing at 2187 nm and 2460 nm. Two simultaneous lasing regions include a GeSn buffer...

2025年1月5日 · Ge-H bonds detected by FTIR in GeSn deposited at RT in 30 % H 2 in Ar. Higher hydrogen content boosts absorption gap and electrical properties. Hydrogenation boosts SWIR sensitivity beyond non-passivated nanocrystalline GeSn.

By studying how to solve the problems of lattice mismatch and Sn segregation, the preparation technology of GeSn single crystal materials has made great progress. GeSn optoelectronic devices such as detectors and light-emitting devices have been successively prepared.

2015年4月2日 · Large strain relaxation was observed after the deposition of the 500-nm-thick GeSn layer, and the 500-nm-thick GeSn layer with 8.4 % Sn content was almost fully relaxed. The band gap of this GeSn layer was determined by FT-IR measurement to be about 0.52 eV, which is consistent with the theoretical value [1, 2, 33]. Band gap narrowing ...

2021年11月17日 · Low-cost and CMOS-compatible Si-based photonic technologies, like Silicon-On-Insulator (SOI), has enabled significant advances for on-chip optical processing in the near-infrared (IR) wavelength...

2023年9月19日 · In this review, after introducing the state-of-the-art of the fabrication and properties of GeSn, we provide a comprehensive overview of the current understanding of GeSn defects and their influence on the material (opto)electronic properties. Throughout the manuscript, we highlight the critical points that are still to solve.

In this work, PL and EL characterization systems were designed, built, and aligned using a Bruker Fourier transform infrared (FTIR) set up to collect the emission from fabricated GeSn samples using an external source with an external photodetector.