Investigation of GeSn Strain Relaxation and Spontaneous Composition ...
2018年4月4日 · Recent development of group-IV alloy GeSn indicates its bright future for the application of mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition is highly...
Direct-indirect GeSn band structure formation by laser Radiation…
2020年8月1日 · Sn solubility can be enhanced by laser irradiation in GeSn alloy. Graded bandgap GeSn structure can be formed by laser processing. Direct bandgap GeSn is achieved by Sn enhancement from 4% to 14%. Differential reflectivity signal & EDS confirm indirect-direct transition. Carrier lifetime of ~25 ns verifies good quality of processed material.
Composition and strain effects on Raman vibrational modes of GeSn ...
2024年3月1日 · Nowadays, X-ray Diffraction (XRD) Reciprocal Space Mapping (RSM) is a widely used non-destructive analysis technique for GeSn materials to determine the Sn content and strain properties [3].
X-ray diffraction study of strain relaxation, spontaneous …
2020年6月9日 · In this paper, we demonstrate that comparison between measured and a calculated XRD reciprocal space map (RSM) provides an alternative to SIMS and TEM to obtain the (1) strain state, (2) composition, (3) density of MDs and (4) type of MDs [22, 24] for a compositionally graded layer.
Room Temperature Lattice Thermal Conductivity of GeSn Alloys
2024年5月15日 · A set of asymmetric (224) X-ray diffraction reciprocal space mappings (XRD-RSM) corresponding to GeSn layers with Sn concentration between 4 at.% and 14 at.% are shown in Figure 1a–d as a function of the real space in-plane and out-of-plane lattice parameters. The GeSn layer peak position shifts to larger lattice parameters as a result of the ...
RSM of sample 3 with Si, Ge and Ge/GeSn MQW reflections (top).
A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical...
Phase-Coherent Transport in GeSn Alloys on Si - Wiley Online …
2024年11月1日 · Germanium-Tin (GeSn) is a novel semiconductor Group IV alloy that can be tuned from indirect to direct bandgap semiconductors by adjusting the Sn content. This property makes this alloy class attractive for integrated photonic applications and …
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs …
2024年5月22日 · We also present a new analytical tool for easily calculating Ge 1−x Sn x compositions using reciprocal space map (RSM) data, which is very useful in the field of GeSn epitaxial growths.
Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn
2013年1月29日 · The first outcome of this study was the determination of the critical GeSn thickness of strain relaxation (h c), above which it becomes energetically favorable for misfit dislocations (MDs) to be formed at the GeSn/Ge interface in order to relax the tetragonally distorted compressively strained GeSn epilayer.
(1 1 5) RSM of (a) as grown Ge0.9Sn0.1/Ge MQWs and (b) the …
We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are...