2017年6月15日 · Simulation of the X-ray diffraction process is imperative for structural analysis of GeSn/Ge multi-quantum wells. GeSn wells are found under compressive strain characterized by X-ray diffraction (224) reciprocal space mapping. The compressive strain affects the calculation of Sn composition in GeSn wells.

2024年6月1日 · The double crystal X-ray diffraction (DC-XRD, X’Pert PRO MRD) was carried out to investigate the crystalline quality of the GeSn layers. The surface morphology of the GeSn layers was observed by scanning electron microscope (SEM, Regulus8100) and atomic force microscope (AFM, SPA-400).

2018年4月4日 · Relaxed GeSn with high material quality and high Sn composition is highly desirable to cover mid-infrared wavelength. However, its crystal growth remains a great challenge. In this work, a...

2023年8月15日 · Atomic Force Microscopy (AFM) and X-Ray Diffraction (XRD) revealed similar melt regimes for GeSn on Ge and SiGe on Si. At the melt threshold, surface structures formed where small areas melted. We were then in the so-called surface melt regime.

2017年4月20日 · GeSn thin films on Ge (001) with various Sn concentrations from 3.36 to 7.62% were grown by molecular beam epitaxy and characterized. The structural properties were analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction (XRD).

2023年1月12日 · X-ray diffractor (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), transmission electron microscope (TEM) and X-ray energy dispersive spectroscope (EDS) were employed to characterize the structural properties of GeSn samples.

XRD analysis is carried out to investigate the growth of germanium and silicon nanocrystals and GeSn crystallites as shown in Fig. 1b which shows the existence of GeSn peaks with different ...

2021年8月6日 · Reciprocal space mapping (RSM) and high-resolution x-ray diffraction (HR-XRD) were used to characterize the composition, degree of strain relaxation (R), and in-plane strain (//) of GeSn alloys. Surface morphology and crystal quality were investigated by atomic force microscopy (AFM), Raman spectroscopy, and cross-sectional transmission ...

2024年1月1日 · XRD was used to investigate crystal quality and strain and was accomplished using a Panalytical X'pert MRD diffractometer utilizing a CuKα1 source of (λ = 0.15406 nm). This system makes use of a four-bounce Ge (220) monochromator, a multilayer focusing mirror and a …

The XRD peaks were detected at a 2h angle of 53.71°for GeSn (311) [22] and 64.8°for GeSn (400) [39,41]. ... Polycrystalline GeSn thin films fabricated by simultaneous laser sintering and ...