2006年2月11日 · ggnmos Hi, In my ESD protection strategy, I used the GGNMOS diode and GGPMOS diode as my ESD protect circuit. The GGNMOS is from the pad to GND and the GGPMOS is from the PAD to VDD. But some one recommend me to replace the GGPMOS diode with the GGNMOS diode and said it will play little function in ESD protection.

2005年7月20日 · - prcken is talking about a resistance between gate and source that designers typically use to reduce the Vt1 trigger voltage of a ggNMOS ESD protection. - The rest of the discussion is related to a resistance placed between gate and IO pad.--> see picture to clearly see the difference between both. Of course you can use both together! ES

2004年4月20日 · snapback voltage npn -ieee -patent hi, I am confused about ESD ability between PMOS(PNP) and NMOS(NPN). Why PMOS(PNP) is stronger than NMOS(NPN) for ESD protection? For example, PMOS ESD Design Rule in layout is usually looser than that of NMOS. And in some cases, only GGNMOS is used for ESD...

2015年2月17日 · I can understand the principle of GGNMOS, SCR and Diode in this case. However, when the substrate is charged positively, the CDM waveform flows from inner circuit (substrate) to external ground and cause damage on gate oxide. I can't understand how the positive CDM stress can be handled using ESD protection devices. pn junction of diode is used?

2009年2月25日 · Since ggnmos is connected to ground, it is "off" in the normal mode of operation. But during esd event on drain side (to the net it is protecting) the parasitic BJT in the nmos (source - substrate - drain -> npn) triggers on and will discharge all the current through it.

2006年2月10日 · A paper from IBM showed that from 90nm on it is possible that the ggNMOS cannot even protect its own gate oxide anymore during ESD stress. New proprietary solutions (not free to use without some license) are used to cope with ESD in advanced technologies

2010年12月20日 · Of course, you can use ggNMOS for ESD clamp. Instead of connecting its gate to ground directly, it is more popular to connect the gate to ground thru a resistor (for example, poly resistor with 2Kohm). It is enough for 4KV HBM with correct layout design. RC triggered clamp will lead to smaller layout size for same HBM passing voltage.

2012年2月16日 · I am researing about the devices for TVS(Transient Voltage Suppression) circuit. As I know, GGNMOS is better than zener diode for ESD protection in view of layout area. But almost TVS products are using zener diode for cramping voltage. Why do people use zener diode for TVS application?

2006年11月1日 · gcnmos Hello, I have a question about gate-coupled NMOS for ESD protection. Usually the GCNMOS is used as power clamp between VDD to VSS. P+ poly resistor and MOS capacitance are used to set the RC time constant to sense the ESD stress to help triggering the NMOS clamp, so, when you design this...

2007年8月4日 · Hai freinds, i having douts on GGNMOS, why they are making the ggnmos equal to 400u width and making the pmos and nmos driver circuit near to 700u, can any one guide me in ESD issues.