半导体器件——GIDL篇 - 知乎 - 知乎专栏
Application in NAND： GIDL erase， 3D NAND中， Pwell erase 需结合SEG工艺，工艺复杂，因此越来越多的制造商开始使用GIDL erase，即利用GIDL效应产生电子空穴对，将空穴扫 …
EDA探索丨第7期：GIDL：DIBL的远房兄弟 - 知乎 - 知乎专栏
所谓gidl，实际上是晶体管在截止时的一种漏电机制。 以NMOS为例，其发生在漏端高电压，栅极零电压或者负电压的状态。 这种状态实际上MOS的电流应该处于Ioff的状态。
GIDL effect observed in FinFET shapes and Vt implant energy
Due to the process controllability, especially in photo-lithography, the multi-channel shape to promote the drive current seems not easy to be controlled well and deteriorates the desired …
GIDL analysis of the process variation effect in gate-all-around ...
2018年2月1日 · In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process …
Physical Insights Into the Nature of Gate-Induced Drain Leakage …
2017年4月4日 · We discuss in detail the difference in the nature of GIDL, i.e., drain current dependence on the negative gate voltage (VGS ≤ 0 V) for different NW FET configurations. …
GIDL - 百度百科
GIDL (gate-induced drain leakage) 是指栅诱导漏极 泄漏电流，对 MOSFET 的可靠性影响较大。 MOSFET 中引发 静态功耗 的泄漏电流主要有：源到漏的亚阈泄漏电流，栅泄漏电流，发生在 …
GIDL in Doped and Undoped FinFET Devices for Low-Leakage …
2012年11月26日 · Investigation of gate-induced drain leakage (GIDL) in thick-oxide dual-gate doped- and undoped-channel FinFET devices through 3-D process and device simulations is …
GIDL (Gate Induced Drain Leakage) current model for advanced MOS-FETs is proposed and implemented into HiSIM2, complete surface potential based MOSFET model. The model …
It is very significant to study the GIDL current (IGIDL) in negative capacitance-based FETs as the additional ferroelectric layer afects the electric field as well as band-to-band tunneling. This …
Modeling and analysis of gate-induced drain leakage current
2022年8月16日 · It is very significant to study the GIDL current (IGIDL) in negative capacitance-based FETs as the additional ferroelectric layer affects the electric field as well as band-to …