Description: Reverse conducting IGBT with monolithic body diode. Manufacturer: Infineon Technologies AG.

2023年7月19日 · H15R1203 is 1200V, 15A, Reverse conducting IGBT with monolithic body diode. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

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部件名: H15R1203. 下载. 文件大小: 790Kbytes. 页: 12 Pages. 功能描述: Reverse conducting IGBT with monolithic body diode. 制造商: Infineon Technologies AG.

2022年11月4日 · Marking : H15R1203. Package: PG-TO247-3. Function: 1200V, 15A, Reverse conducting IGBT. Manufacturer: Infineon Technologies. Image and Pinouts:

H15R1203 Features and benefits * Powerful monolithic body diode with low forward voltage designed for soft commutation only * TRENCHSTOPTM technology applications offers: - very tight paramete.

Description: Reverse conducting IGBT with monolithic body diode. 2 Results. Datasheet: 33Kb/1P. Manufacturer: Infineon Technologies AG.

产品型号:H15R1203,生产商:infineon,简要描述:IGBT管15A1200V,由深圳市通络科技电子有限公司代理销售H15R1203库存,采购H15R1203现货供应商,替换H15R1203代替品,免费查看H15R1203.pdf,下载H15R1203资料datasheet资料技术参数,H15R1203数据手册,H15R1203方案应用电路图纸,H15R1203使用指南 ...

下载 H15R1203 数据表. 文件大小: 790.34 Kbytes. 部件名: H15R1203. 功能描述: Reverse conducting IGBT with monolithic body diode. 制造商: Infineon Technologies AG.

H15R1203 Datasheet : Reverse conducting IGBT with monolithic body diode, H15R1203 PDF Download Infineon Technologies, H15R1203 Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits. Electronic Components and Semiconductors search and free download site.