摘要 采用光学发射光谱(OES)原位检测技术,对等离子体刻蚀机中的等离子体状态进行实时监控,讨论了其在故障诊断、分类、刻蚀终点的判断及控制方面的应用。实验平台为在新研发的高密度等离子体刻蚀机,采用化学气体HBr/Cl2为刻蚀气...

氦气和氩气通常用作辅助稀释的作用，cl2做为主刻蚀的气体容易形成陡直的剖面轮廓和凸型的底部轮廓；hbr作为主刻蚀气体能得到比较斜的剖面轮廓和凹形的底部轮廓；

2022年11月1日 · Optical emission spectroscopy (OES) has become a non-intrusive and versatile method for plasma parameters determination. Each spectral line in emission spectroscopy corresponds to an optical transition between two quantum levels of atom/molecule. The spectral line intensities are controlled by densities of species in various upper states.

The good performance of etch rate, surface roughness and low plasma damage suggested that HBr-Ar plasma is the best choice for TiSbTe etching compared with HBr-He, N2 and O2 plasma.

OES is an in-situ sensor for plasma process monitoring, which does not interfere with the plasma. The plasma emission lights have rich information about the plasma species, which can be used to monitor the etching rate, uniformity, selectivity, critical dimensions, and even the profile of etching features on a wafer.

• Make the HBr Si etch in the Oxford Cobra ICP the premier nanophotonics etch process (especially with the enhanced SOI process capability). • Wish list: a dedicated photomask ICP etch system for high resolution ASML DUV masks.

How to monitor chamber conditions? 1. optical emission spectroscopy (OES): real time, run-to-run. 2. FTIR (most of us don’t have this as a practical option). 3. XPS (quasi-in-situ, multi-chamber system). • The “Gap Technique” to simulate sample, …

OES endpoint involves analysis of the light spectrum emitted from a plasma during an etch process. Plasma reactions result in discrete emission peaks dependent on the reactant chemistry in the chamber. Isolating emission peaks and recording the intensity over time allows for detection of a change of state in the process chamber.

Variation of etch rates and linewidths due to various seasoning methods after plasma cleaning of an etch chamber in a poly-Si/oxide (SiO2) etching process are studied. An HBr/O2 based inductively...

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