2016年9月16日 · Abstract: A complete circularly polarized 210-270-GHz frequency-modulated continuous-wave radar with a monostatic homodyne architecture is presented. It consists of a highly integrated radio-frequency transceiver module, an in-house developed linear-frequency chirp generator, and a data acquisition chain.

A 60 GHz SiGe HBT chipset for high speed wireless communication systems has been developed. The functionalities of LNA, up-converter, down-converter and PA have been realized with good performance. Design strategy, achieved results and comparison with state-of-the-art work will be presented.

TRW has the world's only production Molecular Beam Epitaxy (MBE) based GaAs Heterojunction Bipolar Transistor (HBT) technology, delivering over 3 million commercial chips per month, as well as space qualified HBT MMICs.

HBT的集电极-基极击穿电压 (BVCBO)可以通过减小集电极掺杂和增加集电极长度来增加，从而提高输出功率。 与MESFET和pHEMT不同，HBT的击穿电压与输入电压无关且对器件的工艺和加工过程不敏感。

In this paper, a HBT power cell based on flip-chip bump technology was mounted on a well-designed EVB for 3.5 GHz PA applications. To optimize device performance involving thermal effect and grounding inductance of EVB, characterization of 2880 m2 HBT power cell has been investigated by DC, small-signal, and large-signal measurements.

1997年10月1日 · A chip set for a 40 Gb/s fiber optical communication system has been designed and fabricated. On-wafer measurements have been performed to verify circuit operations.

1999年8月1日 · HBTs offer an attractive complement to the existing 0.25 μm PHEMT technology for microwave instruments. The higher power and gain density provided by HBTs leads to significantly smaller chip sizes and potentially lower cost per function. For example a transconductance of 100 mS can be achieved with a 3×3 μm 2 HBT operating at 5 mA.

2025年4月2日 · This paper focuses on the modeling challenges of a multi-cell heterojunction bipolar transistor (HBT) used in radio frequency (RF) power amplifiers and proposes an innovative linear small-signal modeling method. Based on devices with an emitter size of 3 μm × 40 μm × 2–6 (emitter width × emitter length × emitter index-cell number), an equivalent circuit model including peripheral ...

The HBT clock driver circuit provides control logic and synchronized complimentary clocks to the 16 memory chips. It also contains a high speed frequency divider as a part of a phase locked loop for a clock generator.

2002年8月6日 · The combination of SiGe HBT's with advanced Si CMOS to form an SiGe BiCMOS technology represents a unique opportunity for Si-based RF system-on-a-chip solutions. This paper reviews state-of-the-art SiGe HBT technology and assesses its potential for current and future RF and microwave systems.