SEM image of HBT power cell. | Download Scientific Diagram
These HBT power cells achieve high output power (10+ W for 4000µm devices) with efficiencies of up to 70% at near-class-B operation at 2 GHz. ... A 3.2 W coplanar single-device X-band …
HBT-F'TZ has completely resolved our process Limita- tions, while maintaining a high performance with reduce process tolerance by using two self-alignment process. Fig. 6 shows …
Silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) …
2011年1月1日 · silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar CMOS (BiCMOS) technologies are reviewed in terms of their current status and potential …
High-speed SiGe HBTs and their applications - ScienceDirect
2004年3月15日 · The structure of a high-speed self-aligned SiGe heterojunction bipolar transistor (HBT) was optimized through investigations of its characteristics related to the collector-base …
Better thermal dissipating capability can be achieved by copper pillar bump on the top of InGaP/GaAs HBT for better device performance. GaAs MMICs (monolithic microwave …
采用015μm 工艺,进行了提高SiGe HBT 器件 f max 的研究. 对不同器件结构进行的分析表明,采用自对 准结构有利于 f max 的提高, 并研制出了 f max = 157GHz 的SiGe HBT 器件. 2 器件的设计 …
Fig. 4. SEM cross-sectional view of 0.18 μm based SiGe HBT....
Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance.
SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
2016年1月11日 · A technology roadmap for the electrical performance of high-speed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining …
SEM cross section of the fabricated HBT with a WSi/Ti base …
Indium phosphide heterojunction bipolar transistors (HBTs) find applications in very wide-band digital and mixed-signal integrated circuits (ICs).
硅锗异质结双极晶体管 (HBT) 的核微束研究,Nuclear Instruments …
该技术将 III-V 半导体的高速与成熟且简单的硅制造工艺相结合，允许在同一晶片上制造射频、模拟和数字设备。 此外，在总电离剂量和位移损伤的情况下，SiGe HBT 被发现具有极强的辐射强 …
- 某些结果已被删除