Charge trapping in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) is known to change the I-V behaviour of these devices. Trapping also c.

A surface potential based compact model for GaN HEMT current-voltage (IV) and capacitance-voltage (CV) characteristics simulation is developed in this report. In this new model, the channel charge density is first obtained from self-consistent solution of both Poisson's equation and Schrödinger's equations in the quantum well, and then I-V and ...

GaN HEMT 器件性能的评估，一般包含 静态参数测试 （I-V测试）、频率特性（ 小信号S参数测试 ）、功率特性（ Load-Pull测试 ）。静态参数，也被称作直流参数，是用来评估半导体器件性能的基础测试，也是器件使用的重要依据。

A novel Pulsed IV (PIV) behavioral model for Gallium Nitride (GaN) High Electron-Mobility Transistor (HEMT) based on machine learning technique is described in this paper. As one of the core methods of machine learning technique, Bayesian inference is used to build this new model.

2024年1月1日 · 摘要 — 首次提出了一种快速而准确的基于 深度学习 （DL）的ASM-HEMT I- V模型 参数提取方法。 DL基于提取从蒙特卡洛模拟生成的120k个训练数据集，包含3.74亿个I-V数据点。 训练数据集通过蒙特卡洛模拟生成。 通过典型的GaN制造过程成功建模了114个GaN HEMTs。 预测的参数与I-V数据非常吻合。 此外，关键电气参数（如截至电压、线性条件电流和最大电流）的均方根误差分别为2.2%、17.6%和2.4%。 该方法已经验证适用于不同尺寸的多个GaN …

HEMT (or PHEMTs) are rapidly replacing conventional MESFET technology in military and commercial applications requiring low noise figures and high gain, particularly at millimeter-wave frequencies.

2022年8月1日 · In this paper, a novel extended-temperature current–voltage (I-V) model for Gallium Nitride (GaN) high electron mobility transistors (HEMT) devices is proposed. Revised from the traditional Materka nonlinear model, the self-heating and trapping effects are discussed in the paper and incorporated into the proposed model.

2018年8月1日 · In this paper, a novel eight-parameter empirical nonlinear current-voltage (I-V) model for gallium nitride (GaN) high electron mobility transistors (HEMTs) is presented. A hyperbolic sine function is introduced in this model to describe the transfer characteristics between drain-source current, Ids, and gate-source voltage, Vgs.

2018年6月6日 · 在非线性电荷 hemt i v 控制模型的基础上, 对栅极下面沟道中靠近源端附近的电场采用弱强阶梯场近似, 提出 了一 个半经验的速度过冲模型. 经实际计算结果表明, 本模型具有比较高的精度.

Figure 4 presents the classical I-V characteristics of a 4×75 μm HEMT. So far only the conventional AlGaN/GaN HEMT has been considered. ... High-temperature thermal annealing process for...