This paper reports on ultra-low power 4–8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplif

This chapter addresses an optimized InP HEMT design for cryogenic LNA applications for microwave frequencies. The optimization includes the scaling of the barrier layer and the gate length as well as parasitic resistance reduction.

2023年9月19日 · The HEMTs were tested in the first stage of a three-stage hybrid cryogenic 4-6 GHz LNA operating at 100 −μ W dc power. The better performing cryogenic LNA exhibited 23.2 dB average gain, 2.0 K average noise temperature, and -55dBm input 1-dB compression point.

2024年9月20日 · GaN high electron mobility transistor (HEMT)-based low noise amplifiers (LNAs) are an integral part of microwave receiver systems to enhance signal-to-noise ratio (SNR). The noise of LNA itself becomes critical for systems requiring high SNR, such as imaging and satellite communication systems.

2022年8月30日 · We presented a three-stage GaN HEMT LNA MMIC based on the 0.15-μm GaN-on-SiC technology, for use in 5G NR FR2 base station applications, for the frequency range of 26–30 GHz.

Low-power LNAs at 4 K are critical for the scaling up of quantum computing systems due to the limited cooling capability in the dilution refrigerator. This pape.

2020年8月3日 · In this paper, we modeled an LNA amplifier based on HEMT GaN transistors. This amplifier is unconditionally stable in the X-band (8–12) GHz with a gain of 38 dB, a noise factor does not exceed 2.4 dB and lower input and output reflection coefficients (S11, S22). at -14 dB and − 8 dB respectively.

2024年11月2日 · 为了设计一个具有主动调节功能的HEMT LNA，确保其在不同工艺阈值和温度范围内的性能稳定性，我们首先需要了解HEMT LNA的工作原理及影响其性能的关键因素。

2024年8月10日 · "这篇文档是关于一种单片集成HEMT（高电子迁移率晶体管）自偏置低噪声放大器（LNA）的设计，该设计实现了主动调节的自偏置技术。 这种技术能够使HEMT LNA的偏置电流在工艺阈值电压变化0.5伏的情况下保持3%以内的稳定，同时在100°C的温度范围内，偏置电路能将电流调节到1.5%的精度。 LNA具有10dB的典型增益和2.5dB的噪声系数，工作频率范围为1-10GHz。 即使在阈值电压有0.5伏的晶圆上，采用主动偏置调节的LNA也能保持可重复的增益 …

2021年6月15日 · LNA realized using InP HEMT is regarded as the most desirable for terahertz wave receivers. 670 GHz MMIC LNA using 30 nm InP HEMT technology had also been reported by Northrop Grumman Corporation in 2011 [18].