
Samsung Develops Industry-First 36GB HBM3E 12H DRAM
2024年2月27日 · Samsung’s HBM3E 12H provides an all-time high bandwidth of up to 1,280 gigabytes per second (GB/s) and an industry-leading capacity of 36 gigabytes (GB). In comparison to the 8-stack HBM3 8H, both aspects have improved by more than 50%.
HBM3E - Micron Technology, Inc.
Micron’s 8-high and 12-high HBM3E memory cubes further fuel AI innovation at up to 30% lower power consumption than the competition’s. Micron’s 8-high 24GB HBM3E is shipping with NVIDIA H200 Tensor Core GPUs and production-capable 12-high 36GB HBM3E is also available.
Micron Innovates From the Data Center to the Edge With NVIDIA
4 天之前 · Micron HBM3E 12H and LPDDR5X-based SOCAMM solutions designed to unlock full potential of AI platformsSAN JOSE, Calif., March 18, 2025 (GLOBE NEWSWIRE) -- GTC 2025 -- Secular growth of AI is built ...
Leading Memory Innovation with HBM3E | Samsung …
Samsung is leading the pack with its latest 5th generation high bandwidth memory (HBM) device: HBM3E 12H DRAM. This device is designed to give a significant edge to high-demand systems, data centers, AI applications, and advanced graphics-unit processors that power AI computing.
Micron Innovates From the Data Center to the Edge With
4 天之前 · The Micron HBM3E 12H 36GB is also designed into the NVIDIA HGX ™ B300 NVL16 and GB300 NVL72 platforms, while the HBM3E 8H 24GB is available for the NVIDIA HGX B200 and GB200 NVL72 platforms.
Samsung Signs $3 Billion HBM3E 12H Supply Deal with AMD
2024年4月23日 · Korean media reports that Samsung Electronics has signed a 4.134 trillion Won ($3 billion) agreement with AMD to supply 12-high HBM3E stacks. AMD uses HBM stacks in its AI and HPC accelerators based on its CDNA architecture.
Micron Introduces 12-High HBM3E And LPDDR5X-Based …
3 天之前 · Micron Delivers its Most Powerful Memory Products; Announces 12H HBM3E and SOCAMM Memory to Enhance Performance and Efficiency of AI Platforms. Leading memory manufacturers like Micron, SK Hynix ...
삼성전자, 업계 최초 36GB HBM3E 12H D램 개발 | 삼성반도체
삼성전자는 24Gb(기가비트) D램 칩을 TSV(Through-Silicon Via, 실리콘 관통 전극) 기술로 12단까지 적층해 업계 최대 용량인 36GB HBM3E 12H를 구현했다.
Micron continues memory industry leadership with HBM3E 12 …
Micron is now shipping production-capable HBM3E 12-high units to key industry partners for qualification across the AI ecosystem. This HBM3E 12-high milestone demonstrates Micron’s innovations to meet the data-intensive demands of the evolving AI infrastructure.
Micron's HBM3E and SOCAMM Products Boost AI Server
4 天之前 · Additionally, Micron’s HBM3E 12H 36GB is integrated into the NVIDIA HGX B300 NVL16 and GB300 NVL72 platforms, while the HBM3E 8H 24GB is available for the NVIDIA HGX B200 and GB200 NVL72 platforms.