2019年6月4日 · Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultrahigh-temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that high crystalline quality hBN layers are grown at high substrate temperatures, > 1600 ∘ C , and low boron fluxes, ∼ 1 × 10 − 8 ...

2018年2月9日 · We have recently demonstrated growth of hBN layers using plasma-assisted molecular beam epitaxy (PA-MBE) at very high growth temperatures from 1390 to 1690 °C. 33 Atomic force microscopy (AFM) measurements show mono- and few-layer hBN island growth.

2016年3月1日 · Here we demonstrate that strained, epitaxial graphene may be grown directly on hBN using molecular beam epitaxy (MBE) leading to moiré patterns with large periodicity, topological defects and,...

2021年3月19日 · Monolayers of hexagonal boron nitride (hBN) are grown on graphite substrates using high-temperature molecular beam epitaxy (HT-MBE). The hBN monolayers are observed to grow predominantly from step edges on the graphite surface and exhibit a strong dependence of the morphology, including the dominant crystallographic edge, of the hBN monolayers ...

2024年9月14日 · Here, we investigate the electronic transport of moiré field effect transistors (FETs) in which the conducting channel is monolayer graphene grown on hexagonal boron nitride by high temperature...

2018年6月30日 · We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE) of hBN layers on substrates of highly oriented pyrolytic graphite at high substrate temperatures of ~1400 °C. The current paper will present data on the high-temperature PA-MBE growth of hBN layers using a high-efficiency radio-frequency (RF) nitrogen plasma source.

2017年7月26日 · We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The...

2019年5月23日 · Our results demonstrate that PA-MBE growth on highly oriented pyrolytic graphite (HOPG) substrates at temperatures ~1390°C can achieve mono- and few-layer thick hBN with a control of the hBN coverage and atomically flat hBN surfaces which is essential for 2D applications of hBN layers.

molecular beam epitaxy (MBE) has been employed to grow hBN on different substrates. However, the high density of grain boundaries and other defects limit the potential of hBN. A deep understanding of the physics of crystal growth, facilitated by the substrate surface in an MBE environment is necessary to improve the synthesis technique for

A deep understanding of the physics of crystal growth, facilitated by the substrate surface in an MBE environment is necessary to improve the synthesis technique for high-quality hBN. In this work, we have analyzed the hBN deposition and diffusion process using Nudged Elastic Band, and the transition state theory.

2012年6月1日 · In this letter we report the MBE growth of single layer graphene on single crystal h-BN flakes. Characterization of the MBE grown graphene layers by Raman-scattering spectroscopy and atomic-force microscope (AFM) imaging indicate that the graphene layers consist of nanoscale domains.

hBN 单层覆盖率可以通过 PA-MBE 生长温度、时间和 B:N 通量比进行重现控制。在更高的 B:N 通量比下，已经实现了明显更厚的 hBN 层。作者观察到通过将生长温度从 1390°C 降低到 1080°C，hBN 厚度从 40 nm 逐渐增加到 70 nm。

2024年9月8日 · The structure is produced in a multistep procedure involving Metalorganic Vapor Phase Epitaxy (MOVPE) growth of large-area hBN, a wet transfer of hBN onto a SiO 2 /Si substrate, and the subsequent Molecular Beam Epitaxy (MBE) growth of monolayer MoSe 2. The electrically induced change of the carrier concentration is deduced from the evolution ...

2017年2月27日 · In this manuscript we demonstrate a method for the production of h-BN/graphene heterostructures which allows both materials to form on the surface of the Ni substrate. Recently we have shown that...

2022年3月30日 · hBN samples were grown using a Veeco GENxplor ultrahigh temperature MBE system equipped with a radio-frequency (RF) plasma-assisted nitrogen source and an integrated Telemark electron beam evaporator for boron (B).

2020年5月15日 · In this paper we present the sequential high-temperature MBE growth of hBN and graphene and show that this leads to lateral heterostructures, principally through step-flow growth. First, hBN is grown on HOPG using plasma-assisted MBE, with the nucleation of hBN growth primarily at steps on the graphite substrate.

Monolayers of hexagonal boron nitride (hBN) are grown on graphite substrates using high-temperature molecular beam epitaxy (HT-MBE). The hBN monolayers are observed to grow predominantly from...

2016年9月29日 · In this paper, we demonstrate that a van der Waals graphite/hBN heterostructure can be grown using high-temperature plasma-assisted molecular beam epitaxy (MBE) and that this approach provides...

2021年11月19日 · Hexagonal boron nitride (h-BN) is a two-dimensional (2D) synthetic binary compound formed from atoms of alternating boron and nitrogen arranged in a sp2-hybridized hexagonal planar lattice with lattice constants of a = b = …

This thesis discusses the growth of graphene on hexagonal boron nitride (hBN) by high temperature molecular beam epitaxy (MBE) with three different carbon sources: a carbon filament, an atomic carbon source consisting of a thin Ta cylinder and an e-beam source.