2020年11月2日 · Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention over the last few years due to their superior optical properties....

2020年10月1日 · This work reveals the SPE origination mechanism in hBN via the blister inside, and sheds lights on the fabrication for the room-temperature high-performance quantum source with ultrastability and robustness, moreover, exhibits the remarkable potential of the tunable blister-induced quantum emitter in vdW materials for the investigations of the ...

2025年2月28日 · A low HR factor in carbon point defect structures in hBN for SPE promotes higher radiative efficiency, reduces phonon-assisted relaxation, and extends the exciton lifetime, resulting in brighter, more efficient, and more stable SPE.

2024年3月2日 · To date, numerous defect-related single photon emitters (SPE) in hBN have been reported, covering a wide range of wavelengths from infrared to ultraviolet 8, 17, 18, 19. These SPEs hold great...

2024年10月16日 · Here, a solution is provided to this longstanding problem by using metallic nanocavities integrated with hexagonal boron nitride (hBN) flakes with defects acting as nanoscale single photon emitters (SPEs) at room temperature.

ABSTRACT: Two-dimensional hexagonal boron nitride (hBN) that hosts room-temperature single-photon emitters (SPEs) is promising for quantum information applications. An important step toward the practical application of hBN is the on-demand, position-controlled generation of SPEs.

2024年2月15日 · Recently, SPE from hexagonal boron nitride (h-BN) has attracted intense interest because it is optically active and stable at room temperature. Here, we demonstrate a tunable quantum emitter array in h-BN at room temperature by integrating a wafer-scale plasmonic array.

2023年2月15日 · We realize effective activation of the single photon emissions (SPEs) in the multilayer hBN at the positions that are in contact with the apex of the SiO2 spheres. At these points, the local tensile strain induced blue-shift of the SPE is found to be up to 12 nm.

作为一种很有前途的单光子源，层状六方氮化硼（hBN）中的SPEs因其高亮度和室温下优异的光学稳定性而备受关注。 本文综述了 hBN 量子发射的物理机制和最新进展，并总结了在 hBN 中制备高质量 SPE 的各种技术。

2025年2月18日 · Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable photons. hBN-based SPEs offer lower material costs, room temperature emission, and easy integration into ...