2021年1月25日 · HfO 2, a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon technology. This material has a polymorphic nature, with the polar orthorhombic …

2021年4月13日 · Epitaxy of HZO was confirmed by reflection high-energy electron diffraction and TEM. XRD characterization (symmetrical scans) showed peaks that were indexed as o …

2023年4月1日 · We employ TEM imaging to observe the real-time morphological and structural changes in the RRAM device in response to the electrical stimulus. These electrically stressed …

Abstract: In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40°C to …

2008年7月31日 · A transmission electron microscopy (TEM) methodology is developed and applied to quantify the ALD conformality in the nanopores (thickness as a function of depth), …

2022年7月15日 · TEM analysis was conducted to investigate the micro-structure of the HZO films depending on the layer thickness of HfO 2 (Fig. 3). In the cases of H3ZO, the energy …

(a) Typical TEM image of high-HfO 2 /HfAlO/HfO 2 nanolaminate charge trapping layers with high-Al 2 O 3 as blocking oxide. A line profile of Hf and Al elements measured by EDS using a …

2023年11月1日 · In this paper, HfO 2 thin films were deposited by ALD process using a novel precursor modified with a cyclopentadienyl-based ligand to improve thermal stability, and the …

2018年7月1日 · In this study, we investigate atomic layer deposited hafnium dioxide (ALD HfO2) as an insulating film to coat planar platinum microelectrodes, with the active areas being …

结果表明，在倾斜的电偏压下，氧化层中逐渐产生了氧空位，从而形成了导电通道，并且在氧化f层的顶部界面处发生了开关过程。 Resistive switching processes in HfO are demonstrated by …