A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET).

unique current– voltage characteristics. HEMT transistors are able to operate at higher frequencies than ordinary transistors, up to millimeter wave frequencies, and are used in high-frequency products such as cell phones, satellite television receive.

Heterojunction Field Effect Transistors* (HFETs) have developed very rapidly in the last few years, and rival MESFETs both for microwave and high-speed digital applications, The first report on a working HFET device came as recently as in 1980 (Mimura, 1980).

2024年2月8日 · A high-electron-mobility transistor (HEMT or HEM FET), also known as a heterostructure FET (HFET) or modulation-doped FET (MODFET), is a type of field-effect transistor (FET), that uses an electric field to control the flow of current in a semiconductor.

2020年10月27日 · Field-effect transistors used for high-speed applications — such as mobile phones — are either high-electron-mobility transistors (HEMT) or heterojunction field-effect transistors (HFET). These transistors incorporate materials with different bandgaps.

As an example, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are inherently normally-on devices. However, normally-off operation is often desired in many power electronics applications.

- the HFET analog of the inverted channel MOSFET C. G. Fonstad, 3/03 Unbiased bands under the gate: Carriers are drawn into the channel by the gate and from the doped regions. They can be either holes or electrons.

The heterostructure field effect transistor (HFET) has made a dramatic impression on ultra-high speed electronics since the pioneering work in the early 1980's. The development of the HFET is reviewed in this paper which will be a chapter in the book "Gallium Arsenide Technology."

The HEMT or High Electron Mobility Transistor is a type of field effect transistor (FET), that is used to offer a combination of low noise figure and very high levels of performance at microwave frequencies. This is an important device for high speed, high frequency, digital circuits and microwave circuits with low noise applications.

A high electron mobility transistor or HEMT is a type of field effect transistor (FET) which is used to produce high performance at microwave frequencies. The HEMT provides a fusion of low noise figure that comes combined with the unique ability to function at very high microwave frequencies.